Unraveling the μτ-mystery in a-Si:H

Homer Antoniadis; E. A. Schiff

doi:10.1016/S0022-3093(05)80148-6

Unraveling the μτ-mystery in a-Si:H

Homer Antoniadis, E. A. Schiff

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The μτ-mystery is the large difference between mobility-lifetime products (μτ) in a-Si:H estimated from steady-state photoconductivity and transient photocharge measurements. We discuss whether this effect can be attributed to deep-trapping of electrons and subsequent re-emission prior to recombination. We present a simplified version of the re-emission model which shows that its principal assumptions can be checked using photocharge measurements over a sufficiently large time range. Measurements of the transient photocharge in a-Si:H are presented between 10^-8 and 10² s; the measurements show the same features as the re-emission model, and permit the characteristic emission time to be measured.

Original language	English (US)
Pages (from-to)	435-438
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	137-138
Issue number	PART 1
DOIs	https://doi.org/10.1016/S0022-3093(05)80148-6
State	Published - 1991

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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abstract = "The μτ-mystery is the large difference between mobility-lifetime products (μτ) in a-Si:H estimated from steady-state photoconductivity and transient photocharge measurements. We discuss whether this effect can be attributed to deep-trapping of electrons and subsequent re-emission prior to recombination. We present a simplified version of the re-emission model which shows that its principal assumptions can be checked using photocharge measurements over a sufficiently large time range. Measurements of the transient photocharge in a-Si:H are presented between 10-8 and 102 s; the measurements show the same features as the re-emission model, and permit the characteristic emission time to be measured.",

author = "Homer Antoniadis and Schiff, {E. A.}",

note = "Funding Information: *This research was supported by the Solar Energy Research",

year = "1991",

doi = "10.1016/S0022-3093(05)80148-6",

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AU - Antoniadis, Homer

AU - Schiff, E. A.

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PY - 1991

Y1 - 1991

N2 - The μτ-mystery is the large difference between mobility-lifetime products (μτ) in a-Si:H estimated from steady-state photoconductivity and transient photocharge measurements. We discuss whether this effect can be attributed to deep-trapping of electrons and subsequent re-emission prior to recombination. We present a simplified version of the re-emission model which shows that its principal assumptions can be checked using photocharge measurements over a sufficiently large time range. Measurements of the transient photocharge in a-Si:H are presented between 10-8 and 102 s; the measurements show the same features as the re-emission model, and permit the characteristic emission time to be measured.

AB - The μτ-mystery is the large difference between mobility-lifetime products (μτ) in a-Si:H estimated from steady-state photoconductivity and transient photocharge measurements. We discuss whether this effect can be attributed to deep-trapping of electrons and subsequent re-emission prior to recombination. We present a simplified version of the re-emission model which shows that its principal assumptions can be checked using photocharge measurements over a sufficiently large time range. Measurements of the transient photocharge in a-Si:H are presented between 10-8 and 102 s; the measurements show the same features as the re-emission model, and permit the characteristic emission time to be measured.

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Unraveling the μτ-mystery in a-Si:H

Abstract

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