Unraveling the μτ-mystery in a-Si: H

Homer Antoniadis, Eric Allan Schiff

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Abstract

The μτ-mystery is the large difference between mobility-lifetime products (μτ) in a-Si:H estimated from steady-state photoconductivity and transient photocharge measurements. We discuss whether this effect can be attributed to deep-trapping of electrons and subsequent re-emission prior to recombination. We present a simplified version of the re-emission model which shows that its principal assumptions can be checked using photocharge measurements over a sufficiently large time range. Measurements of the transient photocharge in a-Si:H are presented between 10-8 and 102 s; the measurements show the same features as the re-emission model, and permit the characteristic emission time to be measured.

Original languageEnglish (US)
Pages (from-to)435-438
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume137-138
Issue numberPART 1
DOIs
StatePublished - 1991

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ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

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