Two-layer model for electroabsorption and built-in potential measurements on a-Si:H pin solar cells

Lin Jiang, E. A. Schiff

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

Modulated Electroabsorption (EA) measurements have been widely used to estimate built-in potentials (Vbi) in semiconductor devices. The method is particularly simple in devices for which the built-in potential is dropped in a single layer of the device. However, experimental results in amorphous silicon and organic devices can involve at least 2 layers. In the present paper we consider the information which can be obtained about 2-layer semiconductor devices from electroabsorption measurements. In particular we describe a 2-layer EA model appropriate to a-Si:H based pin solar cells, for which both the p+ and i layers contribute to the EA signal. We present an analysis of capacitance and second harmonic measurements which yields the EA coefficient for the p+ layer of the device, and we present measurements on a-Si:H pin devices which appear consistent with this analysis. Wavelength dependent EA then yields the built-in potential across the 2-layer device.

Original languageEnglish (US)
Pages (from-to)203-208
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume420
DOIs
StatePublished - Jan 1 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 11 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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