Transient photocurrent saturation and deep trapping in hydrogenated amorphous silicon

K. A. Conrad, E. A. Schiff

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


The transient photocurrent following laser impulse excitation has been measured as a function of laser excitation density for several samples of undoped hydrogenated amorphous silicon (a-Si:H). A feature is observed in these data which is interpreted as originating from complete saturation of the occupancy of deep electron traps. The trap density is estimated from this feature and compared to the neutral dangling bond defect density obtained from electron spin resonance; both measurements are of the same magnitude. Estimates of the density of states, g*(E), using the measured trap density are also presented.

Original languageEnglish (US)
Pages (from-to)291-294
Number of pages4
JournalSolid State Communications
Issue number3
StatePublished - Oct 1986

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry


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