Transient photocurrent saturation and deep trapping in hydrogenated amorphous silicon

K. A. Conrad; E. A. Schiff

doi:10.1016/0038-1098(86)90468-0

Transient photocurrent saturation and deep trapping in hydrogenated amorphous silicon

K. A. Conrad, E. A. Schiff

Department of Physics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The transient photocurrent following laser impulse excitation has been measured as a function of laser excitation density for several samples of undoped hydrogenated amorphous silicon (a-Si:H). A feature is observed in these data which is interpreted as originating from complete saturation of the occupancy of deep electron traps. The trap density is estimated from this feature and compared to the neutral dangling bond defect density obtained from electron spin resonance; both measurements are of the same magnitude. Estimates of the density of states, g^*(E), using the measured trap density are also presented.

Original language	English (US)
Pages (from-to)	291-294
Number of pages	4
Journal	Solid State Communications
Volume	60
Issue number	3
DOIs	https://doi.org/10.1016/0038-1098(86)90468-0
State	Published - Oct 1986

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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@article{66a8db14f17a4d06b8d8b64a4c00a097,

title = "Transient photocurrent saturation and deep trapping in hydrogenated amorphous silicon",

abstract = "The transient photocurrent following laser impulse excitation has been measured as a function of laser excitation density for several samples of undoped hydrogenated amorphous silicon (a-Si:H). A feature is observed in these data which is interpreted as originating from complete saturation of the occupancy of deep electron traps. The trap density is estimated from this feature and compared to the neutral dangling bond defect density obtained from electron spin resonance; both measurements are of the same magnitude. Estimates of the density of states, g*(E), using the measured trap density are also presented.",

author = "Conrad, {K. A.} and Schiff, {E. A.}",

note = "Funding Information: Acknowledgements - The authors thank H. Fritzsche for specimens and R. Pandya for sample preparation and ESR measurements. This research was supported by the National Science Foundation through grant DMR 83-06083. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "1986",

month = oct,

doi = "10.1016/0038-1098(86)90468-0",

language = "English (US)",

volume = "60",

pages = "291--294",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier",

number = "3",

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TY - JOUR

T1 - Transient photocurrent saturation and deep trapping in hydrogenated amorphous silicon

AU - Conrad, K. A.

AU - Schiff, E. A.

N1 - Funding Information: Acknowledgements - The authors thank H. Fritzsche for specimens and R. Pandya for sample preparation and ESR measurements. This research was supported by the National Science Foundation through grant DMR 83-06083. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1986/10

Y1 - 1986/10

N2 - The transient photocurrent following laser impulse excitation has been measured as a function of laser excitation density for several samples of undoped hydrogenated amorphous silicon (a-Si:H). A feature is observed in these data which is interpreted as originating from complete saturation of the occupancy of deep electron traps. The trap density is estimated from this feature and compared to the neutral dangling bond defect density obtained from electron spin resonance; both measurements are of the same magnitude. Estimates of the density of states, g*(E), using the measured trap density are also presented.

AB - The transient photocurrent following laser impulse excitation has been measured as a function of laser excitation density for several samples of undoped hydrogenated amorphous silicon (a-Si:H). A feature is observed in these data which is interpreted as originating from complete saturation of the occupancy of deep electron traps. The trap density is estimated from this feature and compared to the neutral dangling bond defect density obtained from electron spin resonance; both measurements are of the same magnitude. Estimates of the density of states, g*(E), using the measured trap density are also presented.

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DO - 10.1016/0038-1098(86)90468-0

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VL - 60

SP - 291

EP - 294

JO - Solid State Communications

JF - Solid State Communications

IS - 3

ER -

Transient photocurrent saturation and deep trapping in hydrogenated amorphous silicon

Abstract

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