The transient photocurrent following laser impulse excitation has been measured as a function of laser excitation density for several samples of undoped hydrogenated amorphous silicon (a-Si:H). A feature is observed in these data which is interpreted as originating from complete saturation of the occupancy of deep electron traps. The trap density is estimated from this feature and compared to the neutral dangling bond defect density obtained from electron spin resonance; both measurements are of the same magnitude. Estimates of the density of states, g*(E), using the measured trap density are also presented.
|Original language||English (US)|
|Number of pages||4|
|Journal||Solid State Communications|
|State||Published - Oct 1986|
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Chemistry