Abstract
Transient photocurrent techniques for the characterization of amorphous semiconductors are reviewed; the techniques are based on the assumption that the photocarrier dynamics have the multiple-trapping form. The application of these techniques to five properties of defects in amorphous hydrogenated silicon (a-Si:H) are reviewed. The five properties are: the attempt-to-escape frequency, the photocarrier diffusion length, the total trap density, the capture coefficient-diffusion constant ratio, and the density of states. A discussion of the role of time-of-flight determinations in transient photocurrent characterization is given.
Original language | English (US) |
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Pages (from-to) | 39-46 |
Number of pages | 8 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 763 |
DOIs | |
State | Published - Aug 21 1987 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering