Thermionic emission model for interface effects on the open-circuit voltage of amorphous silicon based solar cells

E. A. Schiff

Thermionic emission model for interface effects on the open-circuit voltage of amorphous silicon based solar cells

E. A. Schiff

Department of Physics

Research output: Contribution to journal › Conference Article › peer-review

14 Scopus citations

Abstract

We present computer modeling for effects of the p/i interface upon the open-circuit voltage V_OC in amorphous silicon based pin solar cells. We show that the modeling is consistent with measurements on the intensity-dependence for the interface effect, and we present an interpretation for the modeling based on thermionic emission of electrons over the electrostatic barrier at the p/i interface. We present additional modeling of the relation of V_OC with the intrinsic layer bandgap E_G. The experimental correlation for optimized cells is V_OC = (E_G/e)-0.79. The correlation is simply explained if V_OC in these cells is determined by the intrinsic layer, and in particular by the (variable) bandgap and by a non-varying valence bandtail width (about 48 meV) of this layer.

Original language	English (US)
Pages (from-to)	1086-1089
Number of pages	4
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
State	Published - 2002
Event	29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: May 19 2002 → May 24 2002

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Cite this

@article{fe5e59f95762403792c3ebefdf5fb486,

title = "Thermionic emission model for interface effects on the open-circuit voltage of amorphous silicon based solar cells",

abstract = "We present computer modeling for effects of the p/i interface upon the open-circuit voltage VOC in amorphous silicon based pin solar cells. We show that the modeling is consistent with measurements on the intensity-dependence for the interface effect, and we present an interpretation for the modeling based on thermionic emission of electrons over the electrostatic barrier at the p/i interface. We present additional modeling of the relation of VOC with the intrinsic layer bandgap EG. The experimental correlation for optimized cells is VOC = (EG/e)-0.79. The correlation is simply explained if VOC in these cells is determined by the intrinsic layer, and in particular by the (variable) bandgap and by a non-varying valence bandtail width (about 48 meV) of this layer.",

author = "Schiff, {E. A.}",

year = "2002",

language = "English (US)",

pages = "1086--1089",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "29th IEEE Photovoltaic Specialists Conference ; Conference date: 19-05-2002 Through 24-05-2002",

}

TY - JOUR

T1 - Thermionic emission model for interface effects on the open-circuit voltage of amorphous silicon based solar cells

AU - Schiff, E. A.

PY - 2002

Y1 - 2002

N2 - We present computer modeling for effects of the p/i interface upon the open-circuit voltage VOC in amorphous silicon based pin solar cells. We show that the modeling is consistent with measurements on the intensity-dependence for the interface effect, and we present an interpretation for the modeling based on thermionic emission of electrons over the electrostatic barrier at the p/i interface. We present additional modeling of the relation of VOC with the intrinsic layer bandgap EG. The experimental correlation for optimized cells is VOC = (EG/e)-0.79. The correlation is simply explained if VOC in these cells is determined by the intrinsic layer, and in particular by the (variable) bandgap and by a non-varying valence bandtail width (about 48 meV) of this layer.

AB - We present computer modeling for effects of the p/i interface upon the open-circuit voltage VOC in amorphous silicon based pin solar cells. We show that the modeling is consistent with measurements on the intensity-dependence for the interface effect, and we present an interpretation for the modeling based on thermionic emission of electrons over the electrostatic barrier at the p/i interface. We present additional modeling of the relation of VOC with the intrinsic layer bandgap EG. The experimental correlation for optimized cells is VOC = (EG/e)-0.79. The correlation is simply explained if VOC in these cells is determined by the intrinsic layer, and in particular by the (variable) bandgap and by a non-varying valence bandtail width (about 48 meV) of this layer.

UR - http://www.scopus.com/inward/record.url?scp=0036953397&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036953397&partnerID=8YFLogxK

M3 - Conference Article

AN - SCOPUS:0036953397

SN - 0160-8371

SP - 1086

EP - 1089

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - 29th IEEE Photovoltaic Specialists Conference

Y2 - 19 May 2002 through 24 May 2002

ER -

Thermionic emission model for interface effects on the open-circuit voltage of amorphous silicon based solar cells

Abstract

ASJC Scopus subject areas

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