Thermionic emission model for interface effects on the open-circuit voltage of amorphous silicon based solar cells

Research output: Contribution to journalConference article


We present computer modeling for effects of the p/i interface upon the open-circuit voltage VOC in amorphous silicon based pin solar cells. We show that the modeling is consistent with measurements on the intensity-dependence for the interface effect, and we present an interpretation for the modeling based on thermionic emission of electrons over the electrostatic barrier at the p/i interface. We present additional modeling of the relation of VOC with the intrinsic layer bandgap EG. The experimental correlation for optimized cells is VOC = (EG/e)-0.79. The correlation is simply explained if VOC in these cells is determined by the intrinsic layer, and in particular by the (variable) bandgap and by a non-varying valence bandtail width (about 48 meV) of this layer.

Original languageEnglish (US)
Pages (from-to)1086-1089
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
StatePublished - Dec 1 2002
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: May 19 2002May 24 2002


ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this