Theoretical Calculations Predict that H+ Causes Direct Depassivation of Si–H Bonds

Theoretical Calculations Predict that H⁺ Causes Direct Depassivation of Si–H Bonds

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@article{d2c34c4bce354dfea44c310ae90df29a,

title = "Theoretical Calculations Predict that H+ Causes Direct Depassivation of Si–H Bonds",

author = "Maye, {Mathew M.}",

year = "2001",

month = may,

day = "3",

doi = "10.1557/mrs2001.263",

language = "English (US)",

volume = "26",

pages = "966--967",

journal = "MRS Bulletin",

issn = "0883-7694",

publisher = "Materials Research Society",

number = "12",

}

TY - JOUR

T1 - Theoretical Calculations Predict that H+ Causes Direct Depassivation of Si–H Bonds

AU - Maye, Mathew M.

PY - 2001/5/3

Y1 - 2001/5/3

UR - http://www.scopus.com/inward/record.url?scp=85011526463&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85011526463&partnerID=8YFLogxK

U2 - 10.1557/mrs2001.263

DO - 10.1557/mrs2001.263

M3 - Article

AN - SCOPUS:85011526463

SN - 0883-7694

VL - 26

SP - 966

EP - 967

JO - MRS Bulletin

JF - MRS Bulletin

IS - 12

ER -