The observation of induced stresses in cadmium telluride films grown on Si by closed hot wall epitaxy system

T. C. Kuo; P. K. Ghosh; P. G. Kornreich

doi:10.1007/BF02834126

The observation of induced stresses in cadmium telluride films grown on Si by closed hot wall epitaxy system

T. C. Kuo, P. K. Ghosh, P. G. Kornreich

Department of Electrical Engineering & Computer Science

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

X-ray diffraction has been used to study the induced stress in cadmium telluride (CdTe) epitaxial layer, grown in a closed hot wall epitaxial system on (100) Silicon (Si) substrates. The difference between the lattice constants and the thermal expansion coefficients of CdTe and Si are about 20% and 50%, respectively. These mismatches could produce tetragonal distortion in CdTe thin films. Our measurements indicate the presence of a biaxial inplane compression and a tension normal to the Si substrate in CdTe films. We also studied the microstructure of these films using scanning electron microscopy. In this paper we will present the effects of the growth conditions on the induced stress and the microstructure of CdTe films.

Original language	English (US)
Pages (from-to)	71-75
Number of pages	5
Journal	Journal of Materials Engineering
Volume	13
Issue number	1
DOIs	https://doi.org/10.1007/BF02834126
State	Published - Mar 1991

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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abstract = "X-ray diffraction has been used to study the induced stress in cadmium telluride (CdTe) epitaxial layer, grown in a closed hot wall epitaxial system on (100) Silicon (Si) substrates. The difference between the lattice constants and the thermal expansion coefficients of CdTe and Si are about 20% and 50%, respectively. These mismatches could produce tetragonal distortion in CdTe thin films. Our measurements indicate the presence of a biaxial inplane compression and a tension normal to the Si substrate in CdTe films. We also studied the microstructure of these films using scanning electron microscopy. In this paper we will present the effects of the growth conditions on the induced stress and the microstructure of CdTe films.",

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year = "1991",

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AU - Kuo, T. C.

AU - Ghosh, P. K.

AU - Kornreich, P. G.

PY - 1991/3

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N2 - X-ray diffraction has been used to study the induced stress in cadmium telluride (CdTe) epitaxial layer, grown in a closed hot wall epitaxial system on (100) Silicon (Si) substrates. The difference between the lattice constants and the thermal expansion coefficients of CdTe and Si are about 20% and 50%, respectively. These mismatches could produce tetragonal distortion in CdTe thin films. Our measurements indicate the presence of a biaxial inplane compression and a tension normal to the Si substrate in CdTe films. We also studied the microstructure of these films using scanning electron microscopy. In this paper we will present the effects of the growth conditions on the induced stress and the microstructure of CdTe films.

AB - X-ray diffraction has been used to study the induced stress in cadmium telluride (CdTe) epitaxial layer, grown in a closed hot wall epitaxial system on (100) Silicon (Si) substrates. The difference between the lattice constants and the thermal expansion coefficients of CdTe and Si are about 20% and 50%, respectively. These mismatches could produce tetragonal distortion in CdTe thin films. Our measurements indicate the presence of a biaxial inplane compression and a tension normal to the Si substrate in CdTe films. We also studied the microstructure of these films using scanning electron microscopy. In this paper we will present the effects of the growth conditions on the induced stress and the microstructure of CdTe films.

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The observation of induced stresses in cadmium telluride films grown on Si by closed hot wall epitaxy system

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