The observation of induced stresses in cadmium telluride films grown on Si by closed hot wall epitaxy system

T. C. Kuo, Prasanta K Ghosh, P. G. Kornreich

Research output: Contribution to journalArticle


X-ray diffraction has been used to study the induced stress in cadmium telluride (CdTe) epitaxial layer, grown in a closed hot wall epitaxial system on (100) Silicon (Si) substrates. The difference between the lattice constants and the thermal expansion coefficients of CdTe and Si are about 20% and 50%, respectively. These mismatches could produce tetragonal distortion in CdTe thin films. Our measurements indicate the presence of a biaxial inplane compression and a tension normal to the Si substrate in CdTe films. We also studied the microstructure of these films using scanning electron microscopy. In this paper we will present the effects of the growth conditions on the induced stress and the microstructure of CdTe films.

Original languageEnglish (US)
Pages (from-to)71-75
Number of pages5
JournalJournal of Materials Engineering
Issue number1
StatePublished - Mar 1991


ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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