The effects of optical bias and temperature on the drift-mobility of intrinsic aSi:H between 10-7 s and 1 s have been studied using coplanar electrode photocurrent transients. The drift mobility depends substantially upon optical bias over the entire time range, in contrast with the expectation from multiple-trapping in a fixed density of trap states. Shallow D- center traps formed from dangling bonds (D0) can account for the discrepancies if optical depopulation of the D0 is taken into account; this effect amounts to optical modification of the one-particle density of states.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry