The long-time drift mobility in aSi:H: Optical bias and temperature dependence

R. Pandya, E. A. Schiff, K. A. Conrad

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

The effects of optical bias and temperature on the drift-mobility of intrinsic aSi:H between 10-7 s and 1 s have been studied using coplanar electrode photocurrent transients. The drift mobility depends substantially upon optical bias over the entire time range, in contrast with the expectation from multiple-trapping in a fixed density of trap states. Shallow D- center traps formed from dangling bonds (D0) can account for the discrepancies if optical depopulation of the D0 is taken into account; this effect amounts to optical modification of the one-particle density of states.

Original languageEnglish (US)
Pages (from-to)193-198
Number of pages6
JournalJournal of Non-Crystalline Solids
Volume66
Issue number1-2
DOIs
StatePublished - Jul 1984

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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