The electron spin resonance lineshape in hydrogenated amorphous silicon germanium alloys

J. K. Lee, E. A. Schiff

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The electron spin-resonance lineshape of the D-center was measured in a series of hydrogenated amorphous silicon-germanium alloys (a-Si1-xGex:H). The lineshape was fitted to obtain the principal g-tensor components g| and g⊥ of a cylindrically symmetric defect; inhomogeneous strains were represented by isotropic Gaussian broadening. For elemental a-Ge:H we obtained g⊥ = 2.013 and g| = 2.042; the result g| > g is not consistent with the model that the D-center in a-Ge:H is an isolated dangling bond. The lineshape in alloys was modeled by superposing the unshifted D-center lineshapes in a-Si:H and a-Ge:H with an additional cylindrical symmetry line with arbitrary g-tensor and broadening. The parameters of this new line were fairly constant for x > 0.20. Models for these results based on delocalization onto two dangling bonds are discussed.

Original languageEnglish (US)
Pages (from-to)423-425
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume114
Issue numberPART 2
DOIs
StatePublished - Dec 2 1989

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'The electron spin resonance lineshape in hydrogenated amorphous silicon germanium alloys'. Together they form a unique fingerprint.

Cite this