Abstract
We present temperature-dependent measurements of the open-circuit voltage VOC(T) in hydrogenated amorphous silicon nip solar cells prepared at United Solar. At room-temperature and above, VOC measured using near-solar illumination intensity differs by as much as 0.04 V for the as-deposited and light-soaked states; the values of VOC for the two states converge below 250 K. Models for VOC based entirely on recombination through deep levels (dangling bonds) do not account for the convergence effect. The convergence is present in a model that assumes the recombination traffic in the as-deposited state involves only bandtails, but which splits the recombination traffic fairly evenly between bandtails and defects for the light-soaked state at room-temperature. Recombination mechanisms are important in understanding light-soaking, and the present results are inconsistent with at least one well-known model for defect generation.
Original language | English (US) |
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Article number | A21.8 |
Pages (from-to) | 591-596 |
Number of pages | 6 |
Journal | Materials Research Society Symposium Proceedings |
Volume | 862 |
State | Published - 2005 |
Event | 2005 Materials Research Society Spring Meeting - San Francisco, CA, United States Duration: Mar 28 2005 → Apr 1 2005 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering