Temperature dependent line-shape of the silicon dangling bond EPR-resonance in polycrystalline silicon

N. H. Nickel, E. A. Schiff

Research output: Contribution to journalConference Articlepeer-review

1 Scopus citations


The temperature dependence of the silicon dangling-bond resonance in polycrystalline (poly-Si) and amorphous silicon (a-Si:H) was measured. At room temperature, electron paramagnetic resonance (EPR) measurements reveal an isotropic g-value of 2.0055 and a line width of 6.5 and 6.1 G for Si dangling-bonds in a-Si:H and poly-Si, respectively. In both materials spin density and g-value are independent of temperature. While in a-Si:H the width of the resonance did not change with temperature, poly-Si exhibits a remarkable T dependence of ΔHPP. In unpassivated poly-Si a pronounced decrease of ΔHPP is observed for temperatures above 300 K. At 384 K ΔHPP reaches a minimum of 5.1 G, then increases to 6.1 G at 460 K, and eventually decreases to 4.6 G at 530 K. In hydrogenated poly-Si ΔHPP decreases monotonically above 425 K. The decreases of ΔHPP is attributed to electron hopping causing motional narrowing. An average hopping distance of 15 and 17.5 angstrom was estimated for unhydrogenated and H passivated poly-Si, respectively.

Original languageEnglish (US)
Pages (from-to)1019-1024
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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