Temperature-dependent defect density measurements in hydrogenated amorphous silicon

Sufi Zafar, E. A. Schiff

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

Electron spin resonance measurements of thermal equilibrium spin density as a function of temperature are reported for a series of undoped hydrogenated amorphous silicon (a-Si:H) specimens. The room-temperature spin density of the specimens varied between 3 × 1015 and 2 × 1017 cm-3. Above 200°C the spind density was activated; the average activation energy was 0.30 eV with a standard deviation of 0.03 eV. Spin densities were measured both in situ and by quenching from elevated temperature, and the differences between the two techniques are reported. Several models for the activation energy was discussed.

Original languageEnglish (US)
Pages (from-to)618-620
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume114
Issue numberPART 2
DOIs
StatePublished - Dec 2 1989

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Temperature-dependent defect density measurements in hydrogenated amorphous silicon'. Together they form a unique fingerprint.

  • Cite this