Temperature-dependent defect density measurements in hydrogenated amorphous silicon

Sufi Zafar, Eric Allan Schiff

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Electron spin resonance measurements of thermal equilibrium spin density as a function of temperature are reported for a series of undoped hydrogenated amorphous silicon (a-Si:H) specimens. The room-temperature spin density of the specimens varied between 3 × 1015 and 2 × 1017 cm-3. Above 200°C the spind density was activated; the average activation energy was 0.30 eV with a standard deviation of 0.03 eV. Spin densities were measured both in situ and by quenching from elevated temperature, and the differences between the two techniques are reported. Several models for the activation energy was discussed.

Original languageEnglish (US)
Pages (from-to)618-620
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume114
Issue numberPART 2
DOIs
StatePublished - Dec 2 1989

Fingerprint

Defect density
Amorphous silicon
amorphous silicon
defects
Activation energy
activation energy
Temperature
temperature
Paramagnetic resonance
Quenching
standard deviation
electron paramagnetic resonance
quenching
room temperature

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Temperature-dependent defect density measurements in hydrogenated amorphous silicon. / Zafar, Sufi; Schiff, Eric Allan.

In: Journal of Non-Crystalline Solids, Vol. 114, No. PART 2, 02.12.1989, p. 618-620.

Research output: Contribution to journalArticle

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