Temperature-dependent defect density measurements in hydrogenated amorphous silicon

Sufi Zafar; E. A. Schiff

doi:10.1016/0022-3093(89)90668-6

Temperature-dependent defect density measurements in hydrogenated amorphous silicon

Sufi Zafar, E. A. Schiff

Department of Physics

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Electron spin resonance measurements of thermal equilibrium spin density as a function of temperature are reported for a series of undoped hydrogenated amorphous silicon (a-Si:H) specimens. The room-temperature spin density of the specimens varied between 3 × 10¹⁵ and 2 × 10¹⁷ cm^-3. Above 200°C the spind density was activated; the average activation energy was 0.30 eV with a standard deviation of 0.03 eV. Spin densities were measured both in situ and by quenching from elevated temperature, and the differences between the two techniques are reported. Several models for the activation energy was discussed.

Original language	English (US)
Pages (from-to)	618-620
Number of pages	3
Journal	Journal of Non-Crystalline Solids
Volume	114
Issue number	PART 2
DOIs	https://doi.org/10.1016/0022-3093(89)90668-6
State	Published - Dec 2 1989

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/0022-3093(89)90668-6

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title = "Temperature-dependent defect density measurements in hydrogenated amorphous silicon",

abstract = "Electron spin resonance measurements of thermal equilibrium spin density as a function of temperature are reported for a series of undoped hydrogenated amorphous silicon (a-Si:H) specimens. The room-temperature spin density of the specimens varied between 3 × 1015 and 2 × 1017 cm-3. Above 200°C the spind density was activated; the average activation energy was 0.30 eV with a standard deviation of 0.03 eV. Spin densities were measured both in situ and by quenching from elevated temperature, and the differences between the two techniques are reported. Several models for the activation energy was discussed.",

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AU - Schiff, E. A.

PY - 1989/12/2

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N2 - Electron spin resonance measurements of thermal equilibrium spin density as a function of temperature are reported for a series of undoped hydrogenated amorphous silicon (a-Si:H) specimens. The room-temperature spin density of the specimens varied between 3 × 1015 and 2 × 1017 cm-3. Above 200°C the spind density was activated; the average activation energy was 0.30 eV with a standard deviation of 0.03 eV. Spin densities were measured both in situ and by quenching from elevated temperature, and the differences between the two techniques are reported. Several models for the activation energy was discussed.

AB - Electron spin resonance measurements of thermal equilibrium spin density as a function of temperature are reported for a series of undoped hydrogenated amorphous silicon (a-Si:H) specimens. The room-temperature spin density of the specimens varied between 3 × 1015 and 2 × 1017 cm-3. Above 200°C the spind density was activated; the average activation energy was 0.30 eV with a standard deviation of 0.03 eV. Spin densities were measured both in situ and by quenching from elevated temperature, and the differences between the two techniques are reported. Several models for the activation energy was discussed.

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JF - Journal of Non-Crystalline Solids

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Temperature-dependent defect density measurements in hydrogenated amorphous silicon

Abstract

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