Temperature and electric field dependence of the picosecond electron drift velocity in a-Si: H

R. I. Devlen, J. Tauc, Eric Allan Schiff

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

The electron drift-mobility in undoped hydrogenerated amorphous silicon (a-Si:H) was measured with picosecond resolution using an optically-detected time-of-flight technique. From 240 to 400K the drift-mobility increased from 1 to 4 cm2/Vs. No evidence of dispersion was found; this result strongly constrains trapping models for the temperature-dependence. A superlinear dependence of the drift-velocity upon the electric field was also observed at 300K and below.

Original languageEnglish (US)
Pages (from-to)567-569
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume114
Issue numberPART 2
DOIs
StatePublished - Dec 2 1989

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Amorphous silicon
Temperature distribution
temperature distribution
Electric fields
electric fields
Electrons
electrons
Temperature
amorphous silicon
trapping
temperature dependence

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Temperature and electric field dependence of the picosecond electron drift velocity in a-Si : H. / Devlen, R. I.; Tauc, J.; Schiff, Eric Allan.

In: Journal of Non-Crystalline Solids, Vol. 114, No. PART 2, 02.12.1989, p. 567-569.

Research output: Contribution to journalArticle

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