The electron drift-mobility in undoped hydrogenerated amorphous silicon (a-Si:H) was measured with picosecond resolution using an optically-detected time-of-flight technique. From 240 to 400K the drift-mobility increased from 1 to 4 cm2/Vs. No evidence of dispersion was found; this result strongly constrains trapping models for the temperature-dependence. A superlinear dependence of the drift-velocity upon the electric field was also observed at 300K and below.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry