Temperature and electric field dependence of the picosecond electron drift velocity in a-Si:H

R. I. Devlen, J. Tauc, E. A. Schiff

Research output: Contribution to journalArticle

26 Scopus citations

Abstract

The electron drift-mobility in undoped hydrogenerated amorphous silicon (a-Si:H) was measured with picosecond resolution using an optically-detected time-of-flight technique. From 240 to 400K the drift-mobility increased from 1 to 4 cm2/Vs. No evidence of dispersion was found; this result strongly constrains trapping models for the temperature-dependence. A superlinear dependence of the drift-velocity upon the electric field was also observed at 300K and below.

Original languageEnglish (US)
Pages (from-to)567-569
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume114
Issue numberPART 2
DOIs
StatePublished - Dec 2 1989

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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