Temperature and electric field dependence of the picosecond electron drift velocity in a-Si:H

R. I. Devlen; J. Tauc; E. A. Schiff

doi:10.1016/0022-3093(89)90652-2

Temperature and electric field dependence of the picosecond electron drift velocity in a-Si:H

R. I. Devlen, J. Tauc, E. A. Schiff

Department of Physics

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

The electron drift-mobility in undoped hydrogenerated amorphous silicon (a-Si:H) was measured with picosecond resolution using an optically-detected time-of-flight technique. From 240 to 400K the drift-mobility increased from 1 to 4 cm²/Vs. No evidence of dispersion was found; this result strongly constrains trapping models for the temperature-dependence. A superlinear dependence of the drift-velocity upon the electric field was also observed at 300K and below.

Original language	English (US)
Pages (from-to)	567-569
Number of pages	3
Journal	Journal of Non-Crystalline Solids
Volume	114
Issue number	PART 2
DOIs	https://doi.org/10.1016/0022-3093(89)90652-2
State	Published - Dec 2 1989

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/0022-3093(89)90652-2

Cite this

@article{e5e8343f5340481db8baf052b73368fd,

title = "Temperature and electric field dependence of the picosecond electron drift velocity in a-Si:H",

abstract = "The electron drift-mobility in undoped hydrogenerated amorphous silicon (a-Si:H) was measured with picosecond resolution using an optically-detected time-of-flight technique. From 240 to 400K the drift-mobility increased from 1 to 4 cm2/Vs. No evidence of dispersion was found; this result strongly constrains trapping models for the temperature-dependence. A superlinear dependence of the drift-velocity upon the electric field was also observed at 300K and below.",

author = "Devlen, {R. I.} and J. Tauc and Schiff, {E. A.}",

note = "Funding Information: The authors thank S. Guha for the samples,Z . Vardeny for valuabled iscussionasn d T.R. Kirst for technicala ssistance. This researchw as principally supportedb y NSF grant DMR 8706289; additional support was provided by SERI through contracts XB-6-06005-2a nd ZB-7-0600304. R.I.D. thanks the TeagleF oundationfo r a scholarship.",

year = "1989",

month = dec,

day = "2",

doi = "10.1016/0022-3093(89)90652-2",

language = "English (US)",

volume = "114",

pages = "567--569",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier",

number = "PART 2",

}

TY - JOUR

T1 - Temperature and electric field dependence of the picosecond electron drift velocity in a-Si:H

AU - Devlen, R. I.

AU - Tauc, J.

AU - Schiff, E. A.

N1 - Funding Information: The authors thank S. Guha for the samples,Z . Vardeny for valuabled iscussionasn d T.R. Kirst for technicala ssistance. This researchw as principally supportedb y NSF grant DMR 8706289; additional support was provided by SERI through contracts XB-6-06005-2a nd ZB-7-0600304. R.I.D. thanks the TeagleF oundationfo r a scholarship.

PY - 1989/12/2

Y1 - 1989/12/2

N2 - The electron drift-mobility in undoped hydrogenerated amorphous silicon (a-Si:H) was measured with picosecond resolution using an optically-detected time-of-flight technique. From 240 to 400K the drift-mobility increased from 1 to 4 cm2/Vs. No evidence of dispersion was found; this result strongly constrains trapping models for the temperature-dependence. A superlinear dependence of the drift-velocity upon the electric field was also observed at 300K and below.

AB - The electron drift-mobility in undoped hydrogenerated amorphous silicon (a-Si:H) was measured with picosecond resolution using an optically-detected time-of-flight technique. From 240 to 400K the drift-mobility increased from 1 to 4 cm2/Vs. No evidence of dispersion was found; this result strongly constrains trapping models for the temperature-dependence. A superlinear dependence of the drift-velocity upon the electric field was also observed at 300K and below.

UR - http://www.scopus.com/inward/record.url?scp=0024844966&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024844966&partnerID=8YFLogxK

U2 - 10.1016/0022-3093(89)90652-2

DO - 10.1016/0022-3093(89)90652-2

M3 - Article

AN - SCOPUS:0024844966

SN - 0022-3093

VL - 114

SP - 567

EP - 569

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 2

ER -

Temperature and electric field dependence of the picosecond electron drift velocity in a-Si:H

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this