Study of the spatial resolution achievable with the BTeV pixel sensors

Marina Artuso, Jianchun Wang

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

A Monte Carlo simulation has been developed to predict the spatial resolution of silicon pixel detectors. The results discussed in this paper focus on the unit cell geometry of 50 μm × 400 μm, as chosen for BTeV. Effects taken into account include energy deposition fluctuations along the charged particle path, diffusion, magnetic field, and response of the front end electronics. We compare our predictions with measurements from a recent test beam study performed at Fermilab.

Original languageEnglish (US)
Pages (from-to)115-119
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume465
Issue number1
DOIs
StatePublished - Jun 1 2001

Keywords

  • Pixel
  • Silicon

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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