Studies of double-sided, double metal silicon strip detectors

J. P. Alexander; C. J. Bebek; T. E. Browder; J. A. Dobbins; S. G. Gray; K. Honscheid; C. D. Jones; N. Katayama; J. S. Katris; M. Selen; F. Würthwein; J. Gronberg; R. J. Morrison; D. L. Hale; C. Korte; S. Kyre; H. N. Nelson; T. K. Nelson; C. Qiao; D. J. Sperka; H. Tajima; D. Cinabro; S. Henderson; H. Yamamoto; M. Artuso; Z. Sobolewski; S. Chan; D. F. Cowen; J. S. Miller; R. Balest

doi:10.1016/0168-9002(94)91440-0

Studies of double-sided, double metal silicon strip detectors

J. P. Alexander, C. J. Bebek, T. E. Browder, J. A. Dobbins, S. G. Gray, K. Honscheid, C. D. Jones, N. Katayama, J. S. Katris, M. Selen, F. Würthwein, J. Gronberg, R. J. Morrison, D. L. Hale, C. Korte, S. Kyre, H. N. Nelson, T. K. Nelson, C. Qiao, D. J. SperkaH. Tajima, D. Cinabro, S. Henderson, H. Yamamoto, M. Artuso, Z. Sobolewski, S. Chan, D. F. Cowen, J. S. Miller, R. Balest

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have studied double-sided, double-metal silicon microstrip detectors for the CLEO-II vertex detector. The double-layer structure permits the transverse strips to be connected via longitudinal readout traces to preamplifiers located at the end of the detectors. The detectors are manufactured by Hamamatsu Photonics. They are full size AC coupled detectors with polysilicon bias resistors on the n-side and punchthrough biasing on the p-side. We present measurements of detector static properties, including the extra capacitance due to the double layer structure, as well as measurements of signal and noise.

Original language	English (US)
Pages (from-to)	282-286
Number of pages	5
Journal	Nuclear Inst. and Methods in Physics Research, A
Volume	342
Issue number	1
DOIs	https://doi.org/10.1016/0168-9002(94)91440-0
State	Published - Mar 15 1994

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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Alexander, J. P., Bebek, C. J., Browder, T. E., Dobbins, J. A., Gray, S. G., Honscheid, K., Jones, C. D., Katayama, N., Katris, J. S., Selen, M., Würthwein, F., Gronberg, J., Morrison, R. J., Hale, D. L., Korte, C., Kyre, S., Nelson, H. N., Nelson, T. K., Qiao, C., ... Balest, R. (1994). Studies of double-sided, double metal silicon strip detectors. Nuclear Inst. and Methods in Physics Research, A, 342(1), 282-286. https://doi.org/10.1016/0168-9002(94)91440-0

Alexander, JP, Bebek, CJ, Browder, TE, Dobbins, JA, Gray, SG, Honscheid, K, Jones, CD, Katayama, N, Katris, JS, Selen, M, Würthwein, F, Gronberg, J, Morrison, RJ, Hale, DL, Korte, C, Kyre, S, Nelson, HN, Nelson, TK, Qiao, C, Sperka, DJ, Tajima, H, Cinabro, D, Henderson, S, Yamamoto, H, Artuso, M, Sobolewski, Z, Chan, S, Cowen, DF, Miller, JS & Balest, R 1994, 'Studies of double-sided, double metal silicon strip detectors', Nuclear Inst. and Methods in Physics Research, A, vol. 342, no. 1, pp. 282-286. https://doi.org/10.1016/0168-9002(94)91440-0

@article{b3472363a795414e9220ac0892fdeb91,

title = "Studies of double-sided, double metal silicon strip detectors",

abstract = "We have studied double-sided, double-metal silicon microstrip detectors for the CLEO-II vertex detector. The double-layer structure permits the transverse strips to be connected via longitudinal readout traces to preamplifiers located at the end of the detectors. The detectors are manufactured by Hamamatsu Photonics. They are full size AC coupled detectors with polysilicon bias resistors on the n-side and punchthrough biasing on the p-side. We present measurements of detector static properties, including the extra capacitance due to the double layer structure, as well as measurements of signal and noise.",

author = "Alexander, {J. P.} and Bebek, {C. J.} and Browder, {T. E.} and Dobbins, {J. A.} and Gray, {S. G.} and K. Honscheid and Jones, {C. D.} and N. Katayama and Katris, {J. S.} and M. Selen and F. W{\"u}rthwein and J. Gronberg and Morrison, {R. J.} and Hale, {D. L.} and C. Korte and S. Kyre and Nelson, {H. N.} and Nelson, {T. K.} and C. Qiao and Sperka, {D. J.} and H. Tajima and D. Cinabro and S. Henderson and H. Yamamoto and M. Artuso and Z. Sobolewski and S. Chan and Cowen, {D. F.} and Miller, {J. S.} and R. Balest",

year = "1994",

month = mar,

day = "15",

doi = "10.1016/0168-9002(94)91440-0",

language = "English (US)",

volume = "342",

pages = "282--286",

journal = "Nuclear Inst. and Methods in Physics Research, A",

issn = "0168-9002",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Studies of double-sided, double metal silicon strip detectors

AU - Alexander, J. P.

AU - Bebek, C. J.

AU - Browder, T. E.

AU - Dobbins, J. A.

AU - Gray, S. G.

AU - Honscheid, K.

AU - Jones, C. D.

AU - Katayama, N.

AU - Katris, J. S.

AU - Selen, M.

AU - Würthwein, F.

AU - Gronberg, J.

AU - Morrison, R. J.

AU - Hale, D. L.

AU - Korte, C.

AU - Kyre, S.

AU - Nelson, H. N.

AU - Nelson, T. K.

AU - Qiao, C.

AU - Sperka, D. J.

AU - Tajima, H.

AU - Cinabro, D.

AU - Henderson, S.

AU - Yamamoto, H.

AU - Artuso, M.

AU - Sobolewski, Z.

AU - Chan, S.

AU - Cowen, D. F.

AU - Miller, J. S.

AU - Balest, R.

PY - 1994/3/15

Y1 - 1994/3/15

N2 - We have studied double-sided, double-metal silicon microstrip detectors for the CLEO-II vertex detector. The double-layer structure permits the transverse strips to be connected via longitudinal readout traces to preamplifiers located at the end of the detectors. The detectors are manufactured by Hamamatsu Photonics. They are full size AC coupled detectors with polysilicon bias resistors on the n-side and punchthrough biasing on the p-side. We present measurements of detector static properties, including the extra capacitance due to the double layer structure, as well as measurements of signal and noise.

AB - We have studied double-sided, double-metal silicon microstrip detectors for the CLEO-II vertex detector. The double-layer structure permits the transverse strips to be connected via longitudinal readout traces to preamplifiers located at the end of the detectors. The detectors are manufactured by Hamamatsu Photonics. They are full size AC coupled detectors with polysilicon bias resistors on the n-side and punchthrough biasing on the p-side. We present measurements of detector static properties, including the extra capacitance due to the double layer structure, as well as measurements of signal and noise.

UR - http://www.scopus.com/inward/record.url?scp=0028401345&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028401345&partnerID=8YFLogxK

U2 - 10.1016/0168-9002(94)91440-0

DO - 10.1016/0168-9002(94)91440-0

M3 - Article

AN - SCOPUS:0028401345

SN - 0168-9002

VL - 342

SP - 282

EP - 286

JO - Nuclear Inst. and Methods in Physics Research, A

JF - Nuclear Inst. and Methods in Physics Research, A

IS - 1

ER -

Studies of double-sided, double metal silicon strip detectors

Abstract

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