TY - JOUR
T1 - Stress relief in ion-beam deposited ZnO thin films due to post-deposition thermal treatment
AU - Isa, S. A.
AU - Ghosh, P. K.
PY - 1991/10
Y1 - 1991/10
N2 - We have deposited ZnO thin films on glass and silicon substrates using ion-beam sputtering. Although the quality of the films obtained by this method depends on the deposition parameters, even the best films obtained show evidence of internal stress. We demonstrate here by X-ray diffraction and Auger depth profiling that a post-deposition thermal treatment decreases the internal stress and produces a more stoichiometric ZnO film.
AB - We have deposited ZnO thin films on glass and silicon substrates using ion-beam sputtering. Although the quality of the films obtained by this method depends on the deposition parameters, even the best films obtained show evidence of internal stress. We demonstrate here by X-ray diffraction and Auger depth profiling that a post-deposition thermal treatment decreases the internal stress and produces a more stoichiometric ZnO film.
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U2 - 10.1016/0168-583X(91)95342-B
DO - 10.1016/0168-583X(91)95342-B
M3 - Letter/Newsletter
AN - SCOPUS:44949273445
SN - 0168-583X
VL - 61
SP - 580
EP - 584
JO - Nuclear Inst. and Methods in Physics Research, B
JF - Nuclear Inst. and Methods in Physics Research, B
IS - 4
ER -