We have deposited ZnO thin films on glass and silicon substrates using ion-beam sputtering. Although the quality of the films obtained by this method depends on the deposition parameters, even the best films obtained show evidence of internal stress. We demonstrate here by X-ray diffraction and Auger depth profiling that a post-deposition thermal treatment decreases the internal stress and produces a more stoichiometric ZnO film.
ASJC Scopus subject areas
- Nuclear and High Energy Physics