Stress relief in ion-beam deposited ZnO thin films due to post-deposition thermal treatment

S. A. Isa, P. K. Ghosh

Research output: Contribution to journalLetterpeer-review

1 Scopus citations

Abstract

We have deposited ZnO thin films on glass and silicon substrates using ion-beam sputtering. Although the quality of the films obtained by this method depends on the deposition parameters, even the best films obtained show evidence of internal stress. We demonstrate here by X-ray diffraction and Auger depth profiling that a post-deposition thermal treatment decreases the internal stress and produces a more stoichiometric ZnO film.

Original languageEnglish (US)
Pages (from-to)580-584
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, B
Volume61
Issue number4
DOIs
StatePublished - Oct 1991

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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