Stability of dangling bonds in amorphous hydrogenated silicon

Sufi Zafar; E. A. Schiff

doi:10.1016/0040-6090(88)90142-3

Stability of dangling bonds in amorphous hydrogenated silicon

Sufi Zafar, E. A. Schiff

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Optical bias (illumination intensity) and Staebler-Wronski (illumination history) effects on the paramagnetic defects (dangling bonds) in undoped amorphous hydrogenated silicon are investigated using absorption mode electron spin resonance (ESR). The change in the ESR signature (spectrum and spin relaxation) while under illumination is compared with the absence of significant signature changes in the dark spectrum even following a substantial illumination-induced increase in the defect density.

Original language	English (US)
Pages (from-to)	239-242
Number of pages	4
Journal	Thin Solid Films
Volume	164
Issue number	C
DOIs	https://doi.org/10.1016/0040-6090(88)90142-3
State	Published - Oct 1988

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(88)90142-3

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title = "Stability of dangling bonds in amorphous hydrogenated silicon",

abstract = "Optical bias (illumination intensity) and Staebler-Wronski (illumination history) effects on the paramagnetic defects (dangling bonds) in undoped amorphous hydrogenated silicon are investigated using absorption mode electron spin resonance (ESR). The change in the ESR signature (spectrum and spin relaxation) while under illumination is compared with the absence of significant signature changes in the dark spectrum even following a substantial illumination-induced increase in the defect density.",

author = "Sufi Zafar and Schiff, {E. A.}",

note = "Funding Information: This research was supported by SERI XB-6-06005-2. The authors thank R. Pandya for her collaboration in the early stage of this research.",

year = "1988",

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doi = "10.1016/0040-6090(88)90142-3",

language = "English (US)",

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pages = "239--242",

journal = "Thin Solid Films",

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T1 - Stability of dangling bonds in amorphous hydrogenated silicon

AU - Zafar, Sufi

AU - Schiff, E. A.

N1 - Funding Information: This research was supported by SERI XB-6-06005-2. The authors thank R. Pandya for her collaboration in the early stage of this research.

PY - 1988/10

Y1 - 1988/10

N2 - Optical bias (illumination intensity) and Staebler-Wronski (illumination history) effects on the paramagnetic defects (dangling bonds) in undoped amorphous hydrogenated silicon are investigated using absorption mode electron spin resonance (ESR). The change in the ESR signature (spectrum and spin relaxation) while under illumination is compared with the absence of significant signature changes in the dark spectrum even following a substantial illumination-induced increase in the defect density.

AB - Optical bias (illumination intensity) and Staebler-Wronski (illumination history) effects on the paramagnetic defects (dangling bonds) in undoped amorphous hydrogenated silicon are investigated using absorption mode electron spin resonance (ESR). The change in the ESR signature (spectrum and spin relaxation) while under illumination is compared with the absence of significant signature changes in the dark spectrum even following a substantial illumination-induced increase in the defect density.

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U2 - 10.1016/0040-6090(88)90142-3

DO - 10.1016/0040-6090(88)90142-3

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JO - Thin Solid Films

JF - Thin Solid Films

IS - C

ER -

Stability of dangling bonds in amorphous hydrogenated silicon

Abstract

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