Silicon sensors implemented on p-type substrates for high radiation resistance application

Marina Artuso

doi:10.1016/j.nima.2007.07.106

Silicon sensors implemented on p-type substrates for high radiation resistance application

Marina Artuso

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Silicon based micropattern detectors are essential elements of modern high energy physics experiments. Processes based on p-type substrates are being studied for applications where extremely high radiation fluences are expected. Recent results and prototype efforts are reviewed.

Original language	English (US)
Pages (from-to)	835-838
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	582
Issue number	3
DOIs	https://doi.org/10.1016/j.nima.2007.07.106
State	Published - Dec 1 2007

Keywords

Charge collection efficiency
Radiation hardness
Silicon microstrip
Silicon pixel

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nima.2007.07.106

Cite this

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title = "Silicon sensors implemented on p-type substrates for high radiation resistance application",

abstract = "Silicon based micropattern detectors are essential elements of modern high energy physics experiments. Processes based on p-type substrates are being studied for applications where extremely high radiation fluences are expected. Recent results and prototype efforts are reviewed.",

keywords = "Charge collection efficiency, Radiation hardness, Silicon microstrip, Silicon pixel",

author = "Marina Artuso",

note = "Funding Information: I would like to thank the organizers for a very enjoyable and productive conference in a beautiful setting. I would also like to acknowledge interesting discussions and scientific input from G. Casse, and M. Lozano. This work was supported by the United States National Science Foundation. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2007",

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doi = "10.1016/j.nima.2007.07.106",

language = "English (US)",

volume = "582",

pages = "835--838",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier",

number = "3",

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TY - JOUR

T1 - Silicon sensors implemented on p-type substrates for high radiation resistance application

AU - Artuso, Marina

N1 - Funding Information: I would like to thank the organizers for a very enjoyable and productive conference in a beautiful setting. I would also like to acknowledge interesting discussions and scientific input from G. Casse, and M. Lozano. This work was supported by the United States National Science Foundation. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Silicon based micropattern detectors are essential elements of modern high energy physics experiments. Processes based on p-type substrates are being studied for applications where extremely high radiation fluences are expected. Recent results and prototype efforts are reviewed.

AB - Silicon based micropattern detectors are essential elements of modern high energy physics experiments. Processes based on p-type substrates are being studied for applications where extremely high radiation fluences are expected. Recent results and prototype efforts are reviewed.

KW - Charge collection efficiency

KW - Radiation hardness

KW - Silicon microstrip

KW - Silicon pixel

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M3 - Article

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VL - 582

SP - 835

EP - 838

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 3

ER -

Silicon sensors implemented on p-type substrates for high radiation resistance application

Abstract

Keywords

ASJC Scopus subject areas

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