SHALLOW TRAPS AND THE D** minus CENTRE IN Ge

Sb FAR-INFRARED PHOTOCONDUCTIVITY STUDIES BELOW 1 K.

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Abstract

The far-infrared photoconductivity of Ge:Sb has been investigated at temperatures between 0. 4 and 4. 2 K to elucidate the role of trapping and its relationship to the D** minus center. Several new effects in the photoconductivity spectrum associated with shallow traps (binding energy approximately 0. 5 mev) have been explored: the spectrum depends on electric field, background excitation spectrum, and the spectrometer chopping frequency. The previously reported temperature dependence of the spectrum has also been observed. The new spectral effects are strong evidence that two distinct trapping centers are important in Ge:Sb for donor densities greater than 10**1**4 cm** minus **3.

Original languageEnglish (US)
Pages (from-to)69-93
Number of pages25
JournalPhilosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties
Volume45
Issue number1
StatePublished - Jan 1982

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Photoconductivity
Infrared radiation
Binding energy
Spectrometers
Electric fields
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

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title = "SHALLOW TRAPS AND THE D** minus CENTRE IN Ge: Sb FAR-INFRARED PHOTOCONDUCTIVITY STUDIES BELOW 1 K.",
abstract = "The far-infrared photoconductivity of Ge:Sb has been investigated at temperatures between 0. 4 and 4. 2 K to elucidate the role of trapping and its relationship to the D** minus center. Several new effects in the photoconductivity spectrum associated with shallow traps (binding energy approximately 0. 5 mev) have been explored: the spectrum depends on electric field, background excitation spectrum, and the spectrometer chopping frequency. The previously reported temperature dependence of the spectrum has also been observed. The new spectral effects are strong evidence that two distinct trapping centers are important in Ge:Sb for donor densities greater than 10**1**4 cm** minus **3.",
author = "Schiff, {Eric Allan}",
year = "1982",
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pages = "69--93",
journal = "Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties",
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number = "1",

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N2 - The far-infrared photoconductivity of Ge:Sb has been investigated at temperatures between 0. 4 and 4. 2 K to elucidate the role of trapping and its relationship to the D** minus center. Several new effects in the photoconductivity spectrum associated with shallow traps (binding energy approximately 0. 5 mev) have been explored: the spectrum depends on electric field, background excitation spectrum, and the spectrometer chopping frequency. The previously reported temperature dependence of the spectrum has also been observed. The new spectral effects are strong evidence that two distinct trapping centers are important in Ge:Sb for donor densities greater than 10**1**4 cm** minus **3.

AB - The far-infrared photoconductivity of Ge:Sb has been investigated at temperatures between 0. 4 and 4. 2 K to elucidate the role of trapping and its relationship to the D** minus center. Several new effects in the photoconductivity spectrum associated with shallow traps (binding energy approximately 0. 5 mev) have been explored: the spectrum depends on electric field, background excitation spectrum, and the spectrometer chopping frequency. The previously reported temperature dependence of the spectrum has also been observed. The new spectral effects are strong evidence that two distinct trapping centers are important in Ge:Sb for donor densities greater than 10**1**4 cm** minus **3.

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JO - Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties

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