TY - GEN
T1 - Semiconducting polymer and hydrogenated amorphous silicon heterojunction solar cells
AU - Middya, A. R.
AU - Schiff, Eric A.
N1 - Funding Information:
We thank Dr. Qi Wang of National Renewable Energy Laboratory (NREL) for providing amorphous silicon structures used in this work. We thank Dr. Jill Simpson and Dr. Kelly Douglas of Bayer Corporation for providing supplies of PEDOT-PSS and for discussions of this material. This works has been supported by Thin-Film Photovoltaics Partnership Program of National Renewable Energy Laboratory (Subcontract XAK-8-17619-23).
PY - 2012
Y1 - 2012
N2 - In this work, we report on investigation of p-type semiconducting polymer, {poly(3,4 polyethylenedioxythiophene)-poly(styrenesulfonate)} (PEDOT:PSS) as the p-layer in NIP and PIN hydrogenated amorphous silicon (a-Si:H) solar cells. The rectification ratio of solution-casted diode is ∼ 10, it increases to 3×10 4 when PEDOT:PSS is deposited by Spin Coating technique. We observed additional photovoltaic effect when light is illuminated through polymer side. So far, best solar cells characteristics observed for PEDOT:PSS/a-Si:H hybrid solar cells are V oc ≈ 720 mV and J sc ≈ 1-2 mA/cm 2.
AB - In this work, we report on investigation of p-type semiconducting polymer, {poly(3,4 polyethylenedioxythiophene)-poly(styrenesulfonate)} (PEDOT:PSS) as the p-layer in NIP and PIN hydrogenated amorphous silicon (a-Si:H) solar cells. The rectification ratio of solution-casted diode is ∼ 10, it increases to 3×10 4 when PEDOT:PSS is deposited by Spin Coating technique. We observed additional photovoltaic effect when light is illuminated through polymer side. So far, best solar cells characteristics observed for PEDOT:PSS/a-Si:H hybrid solar cells are V oc ≈ 720 mV and J sc ≈ 1-2 mA/cm 2.
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U2 - 10.1557/opl.2011.1093
DO - 10.1557/opl.2011.1093
M3 - Conference contribution
AN - SCOPUS:84455212285
SN - 9781605112985
T3 - Materials Research Society Symposium Proceedings
SP - 45
EP - 50
BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011
T2 - 2011 MRS Spring Meeting
Y2 - 25 April 2011 through 29 April 2011
ER -