Semi-analytical current source modeling of FinFET devices operating in near/sub-threshold regime with independent gate control and considering process variation

Keyphrases

• Channel Control 20%
• Circuit Energy Consumption 20%
• CMOS Devices 20%
• CMOS Technology 20%
• Effective Channel 20%
• Independent Gate Control 100%
• Modeling Accuracy 20%
• Nonlinear Analytical Model 20%
• Planar CMOS 20%
• Process-induced Variations 20%
• Semi-analytical 100%
• Source Modeling 100%
• Static Timing Analysis 40%
• Sub-threshold Voltage 20%
• Subthreshold Regime 100%
• Suitable Solutions 20%

Engineering

• Control Gate 100%
• Effective Channel 20%
• Lookup Table 20%
• Signal Waveform 20%
• Subthreshold Slope 20%