ROOM TEMPERATURE LIGHT INDUCED ELECTRON SPIN RESONANCE IN UNDOPED HYDROGENATED AMORPHOUS SILICON (a-Si:H).

R. Pandya; S. Zafar; E. A. Schiff

ROOM TEMPERATURE LIGHT INDUCED ELECTRON SPIN RESONANCE IN UNDOPED HYDROGENATED AMORPHOUS SILICON (a-Si:H).

R. Pandya, S. Zafar, E. A. Schiff

Department of Physics

Research output: Chapter in Book/Entry/Poem › Conference contribution

1 Scopus citations

Abstract

The effects of illumination upon the absorption electron spin resonance spectrum of the dangling bond defect system have been studied in undoped amorphous hydrogenated silicon (a-Si:H). A small shift of the inhomogeneous envelope of the system towards higher g-value is observed at room-temperature. The shift is not accompanied by a significant change in the signal. Results are reported which indicate that this shift is not due to illumination induced heating of the specimen or calibration changes of the spectrometer. The results may be related to previously reported optical bias effects upon transient photocurrent and photoinduced absorption studies.

Original language	English (US)
Title of host publication	Materials Research Society Symposia Proceedings
Publisher	Materials Research Soc
Pages	155-159
Number of pages	5
ISBN (Print)	0931837367
State	Published - 1986

Publication series

Name	Materials Research Society Symposia Proceedings
Volume	70
ISSN (Print)	0272-9172

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@inproceedings{f04bb02a53de4ba1af52bbd306f54bdd,

title = "ROOM TEMPERATURE LIGHT INDUCED ELECTRON SPIN RESONANCE IN UNDOPED HYDROGENATED AMORPHOUS SILICON (a-Si:H).",

abstract = "The effects of illumination upon the absorption electron spin resonance spectrum of the dangling bond defect system have been studied in undoped amorphous hydrogenated silicon (a-Si:H). A small shift of the inhomogeneous envelope of the system towards higher g-value is observed at room-temperature. The shift is not accompanied by a significant change in the signal. Results are reported which indicate that this shift is not due to illumination induced heating of the specimen or calibration changes of the spectrometer. The results may be related to previously reported optical bias effects upon transient photocurrent and photoinduced absorption studies.",

author = "R. Pandya and S. Zafar and Schiff, {E. A.}",

year = "1986",

language = "English (US)",

isbn = "0931837367",

series = "Materials Research Society Symposia Proceedings",

publisher = "Materials Research Soc",

pages = "155--159",

booktitle = "Materials Research Society Symposia Proceedings",

}

TY - GEN

T1 - ROOM TEMPERATURE LIGHT INDUCED ELECTRON SPIN RESONANCE IN UNDOPED HYDROGENATED AMORPHOUS SILICON (a-Si:H).

AU - Pandya, R.

AU - Zafar, S.

AU - Schiff, E. A.

PY - 1986

Y1 - 1986

N2 - The effects of illumination upon the absorption electron spin resonance spectrum of the dangling bond defect system have been studied in undoped amorphous hydrogenated silicon (a-Si:H). A small shift of the inhomogeneous envelope of the system towards higher g-value is observed at room-temperature. The shift is not accompanied by a significant change in the signal. Results are reported which indicate that this shift is not due to illumination induced heating of the specimen or calibration changes of the spectrometer. The results may be related to previously reported optical bias effects upon transient photocurrent and photoinduced absorption studies.

AB - The effects of illumination upon the absorption electron spin resonance spectrum of the dangling bond defect system have been studied in undoped amorphous hydrogenated silicon (a-Si:H). A small shift of the inhomogeneous envelope of the system towards higher g-value is observed at room-temperature. The shift is not accompanied by a significant change in the signal. Results are reported which indicate that this shift is not due to illumination induced heating of the specimen or calibration changes of the spectrometer. The results may be related to previously reported optical bias effects upon transient photocurrent and photoinduced absorption studies.

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UR - http://www.scopus.com/inward/citedby.url?scp=0022989021&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0022989021

SN - 0931837367

T3 - Materials Research Society Symposia Proceedings

SP - 155

EP - 159

BT - Materials Research Society Symposia Proceedings

PB - Materials Research Soc

ER -

ROOM TEMPERATURE LIGHT INDUCED ELECTRON SPIN RESONANCE IN UNDOPED HYDROGENATED AMORPHOUS SILICON (a-Si:H).

Abstract

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ASJC Scopus subject areas

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