ROOM TEMPERATURE LIGHT INDUCED ELECTRON SPIN RESONANCE IN UNDOPED HYDROGENATED AMORPHOUS SILICON (a-Si:H).

R. Pandya, S. Zafar, E. A. Schiff

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The effects of illumination upon the absorption electron spin resonance spectrum of the dangling bond defect system have been studied in undoped amorphous hydrogenated silicon (a-Si:H). A small shift of the inhomogeneous envelope of the system towards higher g-value is observed at room-temperature. The shift is not accompanied by a significant change in the signal. Results are reported which indicate that this shift is not due to illumination induced heating of the specimen or calibration changes of the spectrometer. The results may be related to previously reported optical bias effects upon transient photocurrent and photoinduced absorption studies.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Pages155-159
Number of pages5
ISBN (Print)0931837367
StatePublished - Dec 1 1986

Publication series

NameMaterials Research Society Symposia Proceedings
Volume70
ISSN (Print)0272-9172

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Pandya, R., Zafar, S., & Schiff, E. A. (1986). ROOM TEMPERATURE LIGHT INDUCED ELECTRON SPIN RESONANCE IN UNDOPED HYDROGENATED AMORPHOUS SILICON (a-Si:H). In Materials Research Society Symposia Proceedings (pp. 155-159). (Materials Research Society Symposia Proceedings; Vol. 70). Materials Research Soc.