TY - JOUR
T1 - RESIDUAL FATIGUES IN MICROELECTRONIC DEVICES DUE TO THERMOELASTIC STRAINS CAUSED BY REPETITIVE ELECTRICAL OVERSTRESSINGS
T2 - A MODEL FOR LATENT FAILURES.
AU - Neelakantaswamy, Perambur S.
AU - Sarkar, Tapan K.
AU - Turkman, Ibrahim R.
PY - 1985
Y1 - 1985
N2 - Latent ESD/EOS effects produce no detectable changes in device performance at the time of ESD/EOS event(s), but subsequently produce deviatory device characteristics during normal use. The causative factors and the mechanism(s) of EOS-based latent failures are subtle in nature. However, considering the time-dependent degradation observed at low or subcatastrophic thresholds of static-exposure, the latent failure induction can be attributed to the cumulative buildup of strains due to thermoelastic stresses caused by repetitive zaps. Presently, the interaction between repetitive transients and the device is specified by two quantifiable terms factor (LEF). A thermodynamical analysis is developed to portray the thermoelastic straining, and the resulting endochronic response of stress-relief is studied by a constitutive modeling of the creep involved.
AB - Latent ESD/EOS effects produce no detectable changes in device performance at the time of ESD/EOS event(s), but subsequently produce deviatory device characteristics during normal use. The causative factors and the mechanism(s) of EOS-based latent failures are subtle in nature. However, considering the time-dependent degradation observed at low or subcatastrophic thresholds of static-exposure, the latent failure induction can be attributed to the cumulative buildup of strains due to thermoelastic stresses caused by repetitive zaps. Presently, the interaction between repetitive transients and the device is specified by two quantifiable terms factor (LEF). A thermodynamical analysis is developed to portray the thermoelastic straining, and the resulting endochronic response of stress-relief is studied by a constitutive modeling of the creep involved.
UR - http://www.scopus.com/inward/record.url?scp=0022264920&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0022264920&partnerID=8YFLogxK
M3 - Conference Article
AN - SCOPUS:0022264920
SN - 0739-5159
SP - 77
EP - 83
JO - Electrical Overstress/Electrostatic Discharge Symposium Proceedings
JF - Electrical Overstress/Electrostatic Discharge Symposium Proceedings
ER -