Latent ESD/EOS effects produce no detectable changes in device performance at the time of ESD/EOS event(s), but subsequently produce deviatory device characteristics during normal use. The causative factors and the mechanism(s) of EOS-based latent failures are subtle in nature. However, considering the time-dependent degradation observed at low or subcatastrophic thresholds of static-exposure, the latent failure induction can be attributed to the cumulative buildup of strains due to thermoelastic stresses caused by repetitive zaps. Presently, the interaction between repetitive transients and the device is specified by two quantifiable terms factor (LEF). A thermodynamical analysis is developed to portray the thermoelastic straining, and the resulting endochronic response of stress-relief is studied by a constitutive modeling of the creep involved.
|Original language||English (US)|
|Number of pages||7|
|Journal||Electrical Overstress/Electrostatic Discharge Symposium Proceedings|
|State||Published - Dec 1 1985|
ASJC Scopus subject areas
- Condensed Matter Physics