Relaxation of photoexcited electron-hole plasma in quantum wells

M. Cristina Marchetti, Walter Pötz

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

A theoretical study of the relaxation of photoexcited electron-hole plasma in undoped GaAs/GaxAl1-xAs single-quantum-well structures is presented. We confine this study to high carrier concentrations and subpicosecond laser excitations. Both phonon heating and the exchange of energy between electrons and holes via the Coulomb interaction are included in our model. In agreement with recent experiments, we find that carrier cooling is rather insensitive to variations in the well thickness if the sheet density is kept constant. For given layer thickness and times beyond 0.5 ps, however, cooling occurs at a slower rate at higher values of the sheet density. We show that this effect is largely due to a stronger buildup of nonequilibrium optical phonons at higher sheet densities.

Original languageEnglish (US)
Pages (from-to)12391-12402
Number of pages12
JournalPhysical Review B
Volume40
Issue number18
DOIs
StatePublished - Jan 1 1989

ASJC Scopus subject areas

  • Condensed Matter Physics

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