Recombination processes and optical bias in undoped a-Si:H

R. Pandya, E. A. Schiff

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


A quasi-monomolecular recombination model is shown to account for coplanar electrode transient photocurrent measurements in undoped amorphous, hydrogenated silicon (a-Si:H). Optical bias is found to modify both photocarrier dynamics and recombination, but with a response time which exceeds the recombination response time of the specimen. This model provides a new method to obtain the ratio of the microscopic trapping rate b+ and extended-state mobility μ0. Estimates were obtained using several specimens as a function of optical bias, temperature, and optical exposure history; the values range from 10-12 to 10-10 V-cm. These values are substantially lower than the previous estimate (10-9 V-cm) based on extrapolated time-of-flight transient photocurrents, with possible implications for the magnitude of μ0.

Original languageEnglish (US)
Pages (from-to)623-626
Number of pages4
JournalJournal of Non-Crystalline Solids
Issue numberPART 1
StatePublished - Dec 2 1985

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry


Dive into the research topics of 'Recombination processes and optical bias in undoped a-Si:H'. Together they form a unique fingerprint.

Cite this