Recombination processes and optical bias in undoped a-Si

H

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A quasi-monomolecular recombination model is shown to account for coplanar electrode transient photocurrent measurements in undoped amorphous, hydrogenated silicon (a-Si:H). Optical bias is found to modify both photocarrier dynamics and recombination, but with a response time which exceeds the recombination response time of the specimen. This model provides a new method to obtain the ratio of the microscopic trapping rate b+ and extended-state mobility μ0. Estimates were obtained using several specimens as a function of optical bias, temperature, and optical exposure history; the values range from 10-12 to 10-10 V-cm. These values are substantially lower than the previous estimate (10-9 V-cm) based on extrapolated time-of-flight transient photocurrents, with possible implications for the magnitude of μ0.

Original languageEnglish (US)
Pages (from-to)623-626
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume77-78
Issue numberPART 1
DOIs
StatePublished - Dec 2 1985

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Photocurrents
photocurrents
estimates
Amorphous silicon
amorphous silicon
trapping
histories
Electrodes
electrodes
Temperature
temperature

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Recombination processes and optical bias in undoped a-Si : H. / Pandya, R.; Schiff, Eric Allan.

In: Journal of Non-Crystalline Solids, Vol. 77-78, No. PART 1, 02.12.1985, p. 623-626.

Research output: Contribution to journalArticle

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