RECOMBINATION AND THE STANDARD MODEL IN AMORPHOUS HYDROGENATED SILICON (a-Si:H): AN ESSAY.

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Non-radiative photocarrier recombination in amorphous hydrogenated silicon (a-Si:H) is reviewed. Emphasis is given to undoped material in the room temperature regime and to the effects upon photocarrier processes of the D center observed in electron spin resonance. The measurements include electron spin resonance, transient and steady-state photoconductivity, spin-dependent photoconductivity, and surface photovoltage. Three issues are addressed: (i) Is the electron recombination process due to tunneling or to free-to-bound transitions? (ii) Is there an important electron trap, and is the D**0 such a trap? (iii) Is electron capture by the D**0 center and hole capture by the D** minus the dominant recombination channel?

Original languageEnglish (US)
Title of host publicationDisord Semicond
PublisherPlenum Press
ISBN (Print)0306424940
StatePublished - Dec 1 1987

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ASJC Scopus subject areas

  • Engineering(all)

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