Non-radiative photocarrier recombination in amorphous hydrogenated silicon (a-Si:H) is reviewed. Emphasis is given to undoped material in the room temperature regime and to the effects upon photocarrier processes of the D center observed in electron spin resonance. The measurements include electron spin resonance, transient and steady-state photoconductivity, spin-dependent photoconductivity, and surface photovoltage. Three issues are addressed: (i) Is the electron recombination process due to tunneling or to free-to-bound transitions? (ii) Is there an important electron trap, and is the D**0 such a trap? (iii) Is electron capture by the D**0 center and hole capture by the D** minus the dominant recombination channel?
|Original language||English (US)|
|Title of host publication||Disord Semicond|
|State||Published - Dec 1 1987|
ASJC Scopus subject areas