TY - JOUR
T1 - Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring
AU - Nigam, Adarsh
AU - Goel, Neeraj
AU - Bhat, Thirumaleshwara N.
AU - Tawabur Rahman, Md
AU - Dolmanan, Surani Bin
AU - Qiao, Qiquan
AU - Tripathy, Sudhiranjan
AU - Kumar, Mahesh
N1 - Funding Information:
Qiquan Qiao is currently a Harold C. Hohbach Professor and a Graduate Coordinator in Electrical Engineering with South Dakota State University (SDSU). He has published more than 130 peer reviewed papers in leading journals, including Energy and Environmental Science, the Journal of the American Chemical Society, Advanced Materials, Advanced Energy Materials, Advanced Functional Materials, Nanoscale, and Nano Energy. His current research focuses on polymer photovoltaics, dye-sensitized solar cells, perovskite solar cells, lithium ion batteries, and sensors. He has received over $ 6.5 million research grants as PI or Co-PI. He received the 2015 Distinguished Researcher Award from SDSU, the 2014 F O Butler Award for Excellence in Research at SDSU, the 2010 U.S. NSF CAREER, and the 2009 Bergmann Memorial Award from the U.S.-Israel Bi-National Science Foundation.
Funding Information:
This work is an outcome of the R&D project under the Visvesvaraya PhD Scheme of the Ministry of Electronics and Information Technology, Government of India, being implemented by Digital India Corporation and has been supported by NSF MRI ( 1428992 ) and EDA University Center Program ( ED18DEN3030025 ). In this work, the SEM analysis for MoS 2 synthesis and AAS for Hg 2+ ion concentration was carried out at materials research facility (MRC) MNIT Jaipur, India.
Publisher Copyright:
© 2020 Elsevier B.V.
PY - 2020/4/15
Y1 - 2020/4/15
N2 - A sensor for highly sensitive, selective, and rapid determination of the trace amount of toxic Hg2+ ions is developed for the first-time using molybdenum disulfide (MoS2) functionalized AlGaN/GaN high electron mobility transistor (HEMT). The vertically aligned, flower-like MoS2 structures are synthesized through a simple hydrothermal route and applied on the gate region of AlGaN/GaN HEMT. The scanning electron microscopy, Raman spectroscopy, and X-ray diffraction are performed for structural characterization of MoS2. Further, the sensing of Hg2+ ions is performed by electrical characterizations of MoS2 functionalized AlGaN/GaN HEMT. The sensor showed an excellent sensitivity of 0.64 μA/ppb and detection limit of 0.01152 ppb with the rapid response time of 1.8 s. The sensor exhibits the linear range of detection from 0.1 ppb to 100 ppb and highly selective behavior towards Hg2+ ions. The results demonstrated that the MoS2 possess excellent Hg2+ ions capture property, that could be attributed to the complexation of Hg2+ ions with sulfur and the electrostatic interaction between MoS2 and Hg2+ ions alters the drain to source current (IDS) of the HEMT at a constant drain to source voltage (VDS). Therefore, the MoS2 based AlGaN/ GaN HEMT devices have a huge potential for next-generation ion sensing applications.
AB - A sensor for highly sensitive, selective, and rapid determination of the trace amount of toxic Hg2+ ions is developed for the first-time using molybdenum disulfide (MoS2) functionalized AlGaN/GaN high electron mobility transistor (HEMT). The vertically aligned, flower-like MoS2 structures are synthesized through a simple hydrothermal route and applied on the gate region of AlGaN/GaN HEMT. The scanning electron microscopy, Raman spectroscopy, and X-ray diffraction are performed for structural characterization of MoS2. Further, the sensing of Hg2+ ions is performed by electrical characterizations of MoS2 functionalized AlGaN/GaN HEMT. The sensor showed an excellent sensitivity of 0.64 μA/ppb and detection limit of 0.01152 ppb with the rapid response time of 1.8 s. The sensor exhibits the linear range of detection from 0.1 ppb to 100 ppb and highly selective behavior towards Hg2+ ions. The results demonstrated that the MoS2 possess excellent Hg2+ ions capture property, that could be attributed to the complexation of Hg2+ ions with sulfur and the electrostatic interaction between MoS2 and Hg2+ ions alters the drain to source current (IDS) of the HEMT at a constant drain to source voltage (VDS). Therefore, the MoS2 based AlGaN/ GaN HEMT devices have a huge potential for next-generation ion sensing applications.
KW - AlGaN/ GaN HEMT
KW - Hg2ions
KW - MoS
KW - Selectivity
KW - Sensitivity
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U2 - 10.1016/j.snb.2020.127832
DO - 10.1016/j.snb.2020.127832
M3 - Article
AN - SCOPUS:85079052519
SN - 0925-4005
VL - 309
JO - Sensors and Actuators, B: Chemical
JF - Sensors and Actuators, B: Chemical
M1 - 127832
ER -