Preparation and electrical properties of thin films of antimony sulphur iodide (sbsi)

P. K. Ghosh; A. S. Bhalla; L. E. Cross

doi:10.1080/00150198308009049

Preparation and electrical properties of thin films of antimony sulphur iodide (sbsi)

P. K. Ghosh, A. S. Bhalla, L. E. Cross

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The c-axis oriented thin films of SbSI are prepared by the recrystallization of the amorphous SbSI films. The recrystallized films show the pyroelectric properties and have a dielectric capacitance between 0.2-0.5 uF/cm2 and the tan 6 <1%.

Original language	English (US)
Pages (from-to)	29-33
Number of pages	5
Journal	Ferroelectrics
Volume	51
Issue number	1
DOIs	https://doi.org/10.1080/00150198308009049
State	Published - Jan 1983
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1080/00150198308009049

Cite this

@article{dfd65d2d20e745b29d88cd161fd9a8d2,

title = "Preparation and electrical properties of thin films of antimony sulphur iodide (sbsi)",

abstract = "The c-axis oriented thin films of SbSI are prepared by the recrystallization of the amorphous SbSI films. The recrystallized films show the pyroelectric properties and have a dielectric capacitance between 0.2-0.5 uF/cm2 and the tan 6 <1%.",

author = "Ghosh, {P. K.} and Bhalla, {A. S.} and Cross, {L. E.}",

year = "1983",

month = jan,

doi = "10.1080/00150198308009049",

language = "English (US)",

volume = "51",

pages = "29--33",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

number = "1",

}

TY - JOUR

T1 - Preparation and electrical properties of thin films of antimony sulphur iodide (sbsi)

AU - Ghosh, P. K.

AU - Bhalla, A. S.

AU - Cross, L. E.

PY - 1983/1

Y1 - 1983/1

N2 - The c-axis oriented thin films of SbSI are prepared by the recrystallization of the amorphous SbSI films. The recrystallized films show the pyroelectric properties and have a dielectric capacitance between 0.2-0.5 uF/cm2 and the tan 6 <1%.

AB - The c-axis oriented thin films of SbSI are prepared by the recrystallization of the amorphous SbSI films. The recrystallized films show the pyroelectric properties and have a dielectric capacitance between 0.2-0.5 uF/cm2 and the tan 6 <1%.

UR - http://www.scopus.com/inward/record.url?scp=0020845626&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020845626&partnerID=8YFLogxK

U2 - 10.1080/00150198308009049

DO - 10.1080/00150198308009049

M3 - Article

AN - SCOPUS:0020845626

SN - 0015-0193

VL - 51

SP - 29

EP - 33

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1

ER -

Preparation and electrical properties of thin films of antimony sulphur iodide (sbsi)

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this