@article{b727412c47f9451da696f453bf70bb8c,
title = "Picosecond Photocarrier Transport in Hydrogenated Amorphous-Silicon p-i-n Diodes",
abstract = "Optically detected, picosecond domain photocarrier transport measurements are reported for hydrogenated amorphous-silicon (a-Si:H) p-i-n diodes with uniform nonuniform electric fields. The transient electroabsorption bleaching mechanism for optical detection is described, the interpretation of these transients is extended to the case of nonuniform electric fields. A technique for using surface-absorbed light optical detection for measurement of non-uniform electric fields is presented.",
author = "Schiff, {E. A.} and J. Tauc",
note = "Funding Information: Manuscript received December 19, 1988; revised August 24, 1989. This work was principally supported by the NSF under Grant DMR 87-06289, and in part by SERI under Contracts XB-6-06005-2 and ZB-7-06003-4. E. A. Schiff is with the Department of Physics, Syracuse University, Syracuse, NY 13244-1130, and is visiting at the Department of Physics and Division of Engineering, Brown University, Providence, RI 02912. H. T. Grahn was with the Department of Physics and Division of Engineering, Brown University, Providence, RI 02912. He is now with the Max Planck Institut fur Festkorperforschung, 7000 Stuttgart 80, Federal Republic of Germany. R. I. Devlen and J. Tauc are with the Department of Physics and Division of Engineering, Brown University, Providence, RI 02912. S. Guha is with Energy Conversion Devices, Inc., Troy, MI 48084. IEEE Log Number 893 1493. Funding Information: ACKNOWLEDGMENT The authors thank T. R. Kirst for technical assistance; 1.D. thanks the Teagle Foundation for a scholarship.",
year = "1989",
month = dec,
doi = "10.1109/16.40937",
language = "English (US)",
volume = "36",
pages = "2781--2784",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",
}