Picosecond Photocarrier Transport in Hydrogenated Amorphous-Silicon p-i-n Diodes

E. A. Schiff, J. Tauc

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Optically detected, picosecond domain photocarrier transport measurements are reported for hydrogenated amorphous-silicon (a-Si:H) p-i-n diodes with uniform nonuniform electric fields. The transient electroabsorption bleaching mechanism for optical detection is described, the interpretation of these transients is extended to the case of nonuniform electric fields. A technique for using surface-absorbed light optical detection for measurement of non-uniform electric fields is presented.

Original languageEnglish (US)
Pages (from-to)2781-2784
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number12
StatePublished - Dec 1989

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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