Optically detected, picosecond domain photocarrier transport measurements are reported for hydrogenated amorphous-silicon (a-Si:H) p-i-n diodes with uniform nonuniform electric fields. The transient electroabsorption bleaching mechanism for optical detection is described, the interpretation of these transients is extended to the case of nonuniform electric fields. A technique for using surface-absorbed light optical detection for measurement of non-uniform electric fields is presented.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering