Picosecond electron transport in hydrogenated amorphous silicon

J. Tauc; R. I. Devlen; E. A. Schiff

doi:10.1016/0379-6787(89)90026-4

Picosecond electron transport in hydrogenated amorphous silicon

J. Tauc, R. I. Devlen, E. A. Schiff

Department of Physics

Research output: Contribution to journal › Article

1 Scopus citations

Abstract

Experimental work aimed at the determination of electron mobilities in a-Si:H in the picosecond time range is reviewed. Recent experiments based on the application of the pump and probe technique to biased p-i-n junctions are presented and the results are discussed.

Original language	English (US)
Pages (from-to)	169-175
Number of pages	7
Journal	Solar Cells
Volume	27
Issue number	1-4
DOIs	https://doi.org/10.1016/0379-6787(89)90026-4
State	Published - Jan 1 1989

ASJC Scopus subject areas

Engineering(all)

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Tauc, J., Devlen, R. I., & Schiff, E. A. (1989). Picosecond electron transport in hydrogenated amorphous silicon. Solar Cells, 27(1-4), 169-175. https://doi.org/10.1016/0379-6787(89)90026-4

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