Abstract
Experimental work aimed at the determination of electron mobilities in a-Si:H in the picosecond time range is reviewed. Recent experiments based on the application of the pump and probe technique to biased p-i-n junctions are presented and the results are discussed.
Original language | English (US) |
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Pages (from-to) | 169-175 |
Number of pages | 7 |
Journal | Solar Cells |
Volume | 27 |
Issue number | 1-4 |
DOIs | |
State | Published - Jan 1 1989 |
ASJC Scopus subject areas
- Engineering(all)