Picosecond electron drift mobility measurements in hydrogenated amorphous silicon

E. A. Schiff, R. I. Devlen, H. T. Grahn, J. Tauc, S. Guha

Research output: Contribution to journalArticle

35 Scopus citations

Abstract

The electron photocarrier drift mobility in undoped, hydrogenated amorphous silicon was measured in the picosecond domain using optically detected time-of-flight techniques based on the electroabsorption effect. The electron drift mobility at room temperature was approximately 3 cm2 /V s between 50 and 500 ps at electric fields of (1-3)×105 V/cm, essentially the same as the mobility measured in the nanosecond domain. The picosecond measurement constrains transport models postulating larger electron mobilities shortly after photogeneration; the mobility lifetime product for a short-time process must be less than 3×10-11 cm2 /V. A slightly superlinear dependence of drift velocity upon an electric field was also found which could not be explained by dispersion effects.

Original languageEnglish (US)
Pages (from-to)1911-1913
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number19
DOIs
StatePublished - Dec 1 1989
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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