Photomodulation spectroscopy of defects in hydrogenated amorphous silicon germanium alloys

L. Chen; J. Tauc; J. K. Lee; E. A. Schiff

doi:10.1016/0022-3093(89)90658-3

Photomodulation spectroscopy of defects in hydrogenated amorphous silicon germanium alloys

L. Chen, J. Tauc, J. K. Lee, E. A. Schiff

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The photomodulation of the sub-bandgap optical absorption spectrum was measured for a series of amorphous hydrogenated silicon germanium (a-Si_1-xGe_x:H) alloy specimens. For atomic germanium concentration exceeding 0.10 a single well-defined defect absorption band was observed which was associated with the germanium-related D-center found by electron spin resonance. The absorption peak was displaced by 0.4 eV from the optical gap as the gap varied from 1.65 to 1.0 eV.

Original language	English (US)
Pages (from-to)	585-587
Number of pages	3
Journal	Journal of Non-Crystalline Solids
Volume	114
Issue number	PART 2
DOIs	https://doi.org/10.1016/0022-3093(89)90658-3
State	Published - Dec 2 1989

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/0022-3093(89)90658-3

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title = "Photomodulation spectroscopy of defects in hydrogenated amorphous silicon germanium alloys",

abstract = "The photomodulation of the sub-bandgap optical absorption spectrum was measured for a series of amorphous hydrogenated silicon germanium (a-Si1-xGex:H) alloy specimens. For atomic germanium concentration exceeding 0.10 a single well-defined defect absorption band was observed which was associated with the germanium-related D-center found by electron spin resonance. The absorption peak was displaced by 0.4 eV from the optical gap as the gap varied from 1.65 to 1.0 eV.",

author = "L. Chen and J. Tauc and Lee, {J. K.} and Schiff, {E. A.}",

note = "Funding Information: *This research was principally supported by NSF DMR 87-06289.",

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doi = "10.1016/0022-3093(89)90658-3",

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AU - Chen, L.

AU - Tauc, J.

AU - Lee, J. K.

AU - Schiff, E. A.

N1 - Funding Information: *This research was principally supported by NSF DMR 87-06289.

PY - 1989/12/2

Y1 - 1989/12/2

N2 - The photomodulation of the sub-bandgap optical absorption spectrum was measured for a series of amorphous hydrogenated silicon germanium (a-Si1-xGex:H) alloy specimens. For atomic germanium concentration exceeding 0.10 a single well-defined defect absorption band was observed which was associated with the germanium-related D-center found by electron spin resonance. The absorption peak was displaced by 0.4 eV from the optical gap as the gap varied from 1.65 to 1.0 eV.

AB - The photomodulation of the sub-bandgap optical absorption spectrum was measured for a series of amorphous hydrogenated silicon germanium (a-Si1-xGex:H) alloy specimens. For atomic germanium concentration exceeding 0.10 a single well-defined defect absorption band was observed which was associated with the germanium-related D-center found by electron spin resonance. The absorption peak was displaced by 0.4 eV from the optical gap as the gap varied from 1.65 to 1.0 eV.

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JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 2

ER -

Photomodulation spectroscopy of defects in hydrogenated amorphous silicon germanium alloys

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