Photomodulation spectroscopy of defects in hydrogenated amorphous silicon germanium alloys

L. Chen, J. Tauc, J. K. Lee, E. A. Schiff

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The photomodulation of the sub-bandgap optical absorption spectrum was measured for a series of amorphous hydrogenated silicon germanium (a-Si1-xGex:H) alloy specimens. For atomic germanium concentration exceeding 0.10 a single well-defined defect absorption band was observed which was associated with the germanium-related D-center found by electron spin resonance. The absorption peak was displaced by 0.4 eV from the optical gap as the gap varied from 1.65 to 1.0 eV.

Original languageEnglish (US)
Pages (from-to)585-587
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume114
Issue numberPART 2
DOIs
StatePublished - Dec 2 1989

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Photomodulation spectroscopy of defects in hydrogenated amorphous silicon germanium alloys'. Together they form a unique fingerprint.

Cite this