Photocurrent response times in undoped amorphous hydrogenated silicon

M. A. Parker, E. A. Schiff

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

The influence of electrical contacts upon coplanar electrode photocurrent response times has been explored in undoped amorphous hydrogenated silicon (a-Si:H) by measuring contact-induced photocurrents in a virtual ground plane. The results indicate that the relatively long photocurrent response times observed in undoped a-Si:H cannot be attributed to contacts. The response times are evidence that some deep-lying defects in a-Si:H are true electron photocarrier traps and not recombination centers. The discrepancy between long-time coplanar and time-of-flight transient photocurrent measurements upon undoped a-Si:H remains unresolved.

Original languageEnglish (US)
Pages (from-to)1087-1089
Number of pages3
JournalApplied Physics Letters
Volume48
Issue number16
DOIs
StatePublished - Dec 1 1986

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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