Abstract
The influence of electrical contacts upon coplanar electrode photocurrent response times has been explored in undoped amorphous hydrogenated silicon (a-Si:H) by measuring contact-induced photocurrents in a virtual ground plane. The results indicate that the relatively long photocurrent response times observed in undoped a-Si:H cannot be attributed to contacts. The response times are evidence that some deep-lying defects in a-Si:H are true electron photocarrier traps and not recombination centers. The discrepancy between long-time coplanar and time-of-flight transient photocurrent measurements upon undoped a-Si:H remains unresolved.
Original language | English (US) |
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Pages (from-to) | 1087-1089 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 48 |
Issue number | 16 |
DOIs | |
State | Published - 1986 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)