Photocarrier drift-mobility measurements and electron localization in nanoporous silicon

P. N. Rao; E. A. Schiff; L. Tsybeskov; P. Fauchet

doi:10.1016/S0301-0104(02)00544-X

Photocarrier drift-mobility measurements and electron localization in nanoporous silicon

P. N. Rao, E. A. Schiff, L. Tsybeskov, P. Fauchet

Department of Physics

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We report photocarrier time-of-flight measurements in diode structures made of highly porous crystalline silicon. The corresponding electron and hole drift mobilities are very small (<10^-4 cm²/V s) compared to homogeneous crystalline silicon. The mobilities are dispersive (i.e., having a power-law decay with time or length-scale), but are only weakly temperature-dependent. The dispersion parameter lies in the range 0.55-0.65 for both electrons and holes. We conclude that the drift mobilities are limited by the nanoporous geometry, and not by disorder-induced localized states acting as traps. This conclusion is surprising in the context of luminescence models based on radiative recombination of localized excitons.

Original language	English (US)
Pages (from-to)	129-138
Number of pages	10
Journal	Chemical Physics
Volume	284
Issue number	1-2
DOIs	https://doi.org/10.1016/S0301-0104(02)00544-X
State	Published - Nov 1 2002

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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title = "Photocarrier drift-mobility measurements and electron localization in nanoporous silicon",

abstract = "We report photocarrier time-of-flight measurements in diode structures made of highly porous crystalline silicon. The corresponding electron and hole drift mobilities are very small (<10-4 cm2/V s) compared to homogeneous crystalline silicon. The mobilities are dispersive (i.e., having a power-law decay with time or length-scale), but are only weakly temperature-dependent. The dispersion parameter lies in the range 0.55-0.65 for both electrons and holes. We conclude that the drift mobilities are limited by the nanoporous geometry, and not by disorder-induced localized states acting as traps. This conclusion is surprising in the context of luminescence models based on radiative recombination of localized excitons.",

author = "Rao, {P. N.} and Schiff, {E. A.} and L. Tsybeskov and P. Fauchet",

note = "Funding Information: The authors thank Qing Gu for his measurements on drift mobilities in porous silicon, and thank Shantenu Jha and Cristina Marchetti for discussions. A referee suggested the discussion of quantum transport effects. Research at University of Rochester was partially supported by the Army Research Office. ",

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T1 - Photocarrier drift-mobility measurements and electron localization in nanoporous silicon

AU - Rao, P. N.

AU - Schiff, E. A.

AU - Tsybeskov, L.

AU - Fauchet, P.

N1 - Funding Information: The authors thank Qing Gu for his measurements on drift mobilities in porous silicon, and thank Shantenu Jha and Cristina Marchetti for discussions. A referee suggested the discussion of quantum transport effects. Research at University of Rochester was partially supported by the Army Research Office.

PY - 2002/11/1

Y1 - 2002/11/1

N2 - We report photocarrier time-of-flight measurements in diode structures made of highly porous crystalline silicon. The corresponding electron and hole drift mobilities are very small (<10-4 cm2/V s) compared to homogeneous crystalline silicon. The mobilities are dispersive (i.e., having a power-law decay with time or length-scale), but are only weakly temperature-dependent. The dispersion parameter lies in the range 0.55-0.65 for both electrons and holes. We conclude that the drift mobilities are limited by the nanoporous geometry, and not by disorder-induced localized states acting as traps. This conclusion is surprising in the context of luminescence models based on radiative recombination of localized excitons.

AB - We report photocarrier time-of-flight measurements in diode structures made of highly porous crystalline silicon. The corresponding electron and hole drift mobilities are very small (<10-4 cm2/V s) compared to homogeneous crystalline silicon. The mobilities are dispersive (i.e., having a power-law decay with time or length-scale), but are only weakly temperature-dependent. The dispersion parameter lies in the range 0.55-0.65 for both electrons and holes. We conclude that the drift mobilities are limited by the nanoporous geometry, and not by disorder-induced localized states acting as traps. This conclusion is surprising in the context of luminescence models based on radiative recombination of localized excitons.

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SP - 129

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JO - Chemical Physics

JF - Chemical Physics

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ER -

Photocarrier drift-mobility measurements and electron localization in nanoporous silicon

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