Photocarrier drift-mobility measurements and electron localization in nanoporous silicon

P. N. Rao, Eric Allan Schiff, L. Tsybeskov, P. Fauchet

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Abstract

We report photocarrier time-of-flight measurements in diode structures made of highly porous crystalline silicon. The corresponding electron and hole drift mobilities are very small (<10-4 cm2/V s) compared to homogeneous crystalline silicon. The mobilities are dispersive (i.e., having a power-law decay with time or length-scale), but are only weakly temperature-dependent. The dispersion parameter lies in the range 0.55-0.65 for both electrons and holes. We conclude that the drift mobilities are limited by the nanoporous geometry, and not by disorder-induced localized states acting as traps. This conclusion is surprising in the context of luminescence models based on radiative recombination of localized excitons.

Original languageEnglish (US)
Pages (from-to)129-138
Number of pages10
JournalChemical Physics
Volume284
Issue number1-2
DOIs
StatePublished - Nov 1 2002

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ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics

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