Photocarrier drift measurements and solar cell models for amorphous silicon

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2 Scopus citations

Abstract

The relationship between transport research and solar cell models for hydrogenated amorphous silicon is reviewed. It is argued that a complete program of steady-state photoconductivity, ambipolar diffusion length, and photoconductivity response time measurements is required to support modeling; the present knowledge of these measurements in electronic quality a-Si:H is summarized. A qualitative discrepancy between trap distributions used for steady-state transport models and estimated from transient photocurrent measurements is discussed.

Original languageEnglish (US)
Pages (from-to)227-233
Number of pages7
JournalSolar Cells
Volume30
Issue number1-4
DOIs
StatePublished - May 1991

ASJC Scopus subject areas

  • Engineering(all)

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