Photocarrier drift and recombination in a-Si:H: the vital importance of defect relaxation

E. A. Schiff, Howard M. Branz, Daxing Han, Douglas C. Melcher, M. Silver

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

A model for steady-state and transient photoconductivity incorporating slow atomic relaxation effects for an electron trap is presented. Relaxation effects of this type were recently proposed to account for transient capacitance measurements in a-Si:H. The model accounts for the typical power-law dependence of the steady-state photocurrent upon illumination rate observed in a-Si:H, and is consistent with most features of transient photocurrent measurements measured under optical bias.

Original languageEnglish (US)
Pages (from-to)331-334
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume164-166
Issue numberPART 1
DOIs
StatePublished - Dec 2 1993

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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