Abstract
A model for steady-state and transient photoconductivity incorporating slow atomic relaxation effects for an electron trap is presented. Relaxation effects of this type were recently proposed to account for transient capacitance measurements in a-Si:H. The model accounts for the typical power-law dependence of the steady-state photocurrent upon illumination rate observed in a-Si:H, and is consistent with most features of transient photocurrent measurements measured under optical bias.
Original language | English (US) |
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Pages (from-to) | 331-334 |
Number of pages | 4 |
Journal | Journal of Non-Crystalline Solids |
Volume | 164-166 |
Issue number | PART 1 |
DOIs | |
State | Published - Dec 2 1993 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry