A model for steady-state and transient photoconductivity incorporating slow atomic relaxation effects for an electron trap is presented. Relaxation effects of this type were recently proposed to account for transient capacitance measurements in a-Si:H. The model accounts for the typical power-law dependence of the steady-state photocurrent upon illumination rate observed in a-Si:H, and is consistent with most features of transient photocurrent measurements measured under optical bias.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry