Photocarrier drift and recombination in a-Si: H: the vital importance of defect relaxation

Eric Allan Schiff, Howard M. Branz, Daxing Han, Douglas C. Melcher, M. Silver

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A model for steady-state and transient photoconductivity incorporating slow atomic relaxation effects for an electron trap is presented. Relaxation effects of this type were recently proposed to account for transient capacitance measurements in a-Si:H. The model accounts for the typical power-law dependence of the steady-state photocurrent upon illumination rate observed in a-Si:H, and is consistent with most features of transient photocurrent measurements measured under optical bias.

Original languageEnglish (US)
Pages (from-to)331-334
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume164-166
Issue numberPART 1
DOIs
StatePublished - Dec 2 1993

Fingerprint

photocurrents
Photocurrents
Defects
defects
photoconductivity
Electron traps
Capacitance measurement
capacitance
illumination
Photoconductivity
traps
Lighting
electrons

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Photocarrier drift and recombination in a-Si : H: the vital importance of defect relaxation. / Schiff, Eric Allan; Branz, Howard M.; Han, Daxing; Melcher, Douglas C.; Silver, M.

In: Journal of Non-Crystalline Solids, Vol. 164-166, No. PART 1, 02.12.1993, p. 331-334.

Research output: Contribution to journalArticle

Schiff, Eric Allan ; Branz, Howard M. ; Han, Daxing ; Melcher, Douglas C. ; Silver, M. / Photocarrier drift and recombination in a-Si : H: the vital importance of defect relaxation. In: Journal of Non-Crystalline Solids. 1993 ; Vol. 164-166, No. PART 1. pp. 331-334.
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