Photocapacitance and hole drift mobility measurements in hydrogenated amorphous silicon (a-Si:H)

Indra Nurdjaja, E. A. Schiff

Research output: Contribution to journalConference article

11 Scopus citations

Abstract

We present measurements of the photocapacitance in hydrogenated amorphous silicon (a-Si:H) Schottky barrier diodes under reverse bias. A calculation relating photocapacitance to hole drift mobility measurements is also presented; the calculation incorporates the prominent dispersion effect for holes in a-Si:H usually attributed to valence bandtail trapping. The calculation accounts quantitatively for the magnitude and voltage-dependence of the photocapacitance.

Original languageEnglish (US)
Pages (from-to)723-728
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume467
StatePublished - Dec 1 1997
EventProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
Duration: Mar 31 1997Apr 4 1997

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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