Abstract
We present measurements of the photocapacitance in hydrogenated amorphous silicon (a-Si:H) Schottky barrier diodes under reverse bias. A calculation relating photocapacitance to hole drift mobility measurements is also presented; the calculation incorporates the prominent dispersion effect for holes in a-Si:H usually attributed to valence bandtail trapping. The calculation accounts quantitatively for the magnitude and voltage-dependence of the photocapacitance.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 723-728 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 467 |
| DOIs | |
| State | Published - 1997 |
| Event | Proceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA Duration: Mar 31 1997 → Apr 4 1997 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering