Phosphorus doping of boron carbon alloys

Seong Don Hwang; P. A. Dowben; A. Cheeseman; J. T. Spencer; D. N. McIlroy

Phosphorus doping of boron carbon alloys

Seong Don Hwang, P. A. Dowben, A. Cheeseman, J. T. Spencer, D. N. McIlroy

Research output: Contribution to journal › Conference Article › peer-review

Abstract

Phosphorus doped boron carbon alloy films were made by chemical vapor deposition from a single source compound, dimeric chloro-phospha(III) carborane ((C₂B₁₀H₁₀)₂(PCl)₂). Phosphorus doped B₅C materials exhibit increases in the band gap from 0.9 eV to 2.6 eV.

Original language	English (US)
Pages (from-to)	1031-1036
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	452
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{cf910fc4a19846ac88728ab3098f4e5b,

title = "Phosphorus doping of boron carbon alloys",

abstract = "Phosphorus doped boron carbon alloy films were made by chemical vapor deposition from a single source compound, dimeric chloro-phospha(III) carborane ((C2B10H10)2(PCl)2). Phosphorus doped B5C materials exhibit increases in the band gap from 0.9 eV to 2.6 eV.",

author = "Hwang, {Seong Don} and Dowben, {P. A.} and A. Cheeseman and Spencer, {J. T.} and McIlroy, {D. N.}",

year = "1997",

language = "English (US)",

volume = "452",

pages = "1031--1036",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 06-12-1996",

}

TY - JOUR

T1 - Phosphorus doping of boron carbon alloys

AU - Hwang, Seong Don

AU - Dowben, P. A.

AU - Cheeseman, A.

AU - Spencer, J. T.

AU - McIlroy, D. N.

PY - 1997

Y1 - 1997

N2 - Phosphorus doped boron carbon alloy films were made by chemical vapor deposition from a single source compound, dimeric chloro-phospha(III) carborane ((C2B10H10)2(PCl)2). Phosphorus doped B5C materials exhibit increases in the band gap from 0.9 eV to 2.6 eV.

AB - Phosphorus doped boron carbon alloy films were made by chemical vapor deposition from a single source compound, dimeric chloro-phospha(III) carborane ((C2B10H10)2(PCl)2). Phosphorus doped B5C materials exhibit increases in the band gap from 0.9 eV to 2.6 eV.

UR - http://www.scopus.com/inward/record.url?scp=0030699043&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030699043&partnerID=8YFLogxK

M3 - Conference Article

AN - SCOPUS:0030699043

SN - 0272-9172

VL - 452

SP - 1031

EP - 1036

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -

Phosphorus doping of boron carbon alloys

Abstract

ASJC Scopus subject areas

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