Performance prediction for multiple-threshold 7nm-FinFET-based circuits operating in multiple voltage regimes using a cross-layer simulation framework@usc.edu

Shuang Chen, Yanzhi Wang, Xue Lin, Qing Xie, Massoud Pedram

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Scopus citations

Abstract

Because of their many attractive attributes, FinFETs are emerging as the device of choice for CMOS process technology nodes below 20nm. This paper is the first work that investigates the effectiveness of building CMOS circuits operating in the near-threshold regime and above with 7nm FinFET technology through a cross-layer design and simulation framework. Three types of FinFET devices with different threshold voltages are designed using Sentaurus TCAD to accommodate the need for constructing both high-speed cells and low-power cells in the same library. Compact and SPICE-compatible device models are extracted with high accuracy using current source modeling techniques. Standard cell libraries with two different (near-and super-threshold) supply voltages are generated. Circuit syntheses are performed on extensive benchmarks to compare the performance with the state-of-the-art planar CMOS counterparts. Simulation results demonstrate the benefit of 7nm FinFET-based circuits from both aspects of speed and energy efficiency.

Original languageEnglish (US)
Title of host publication2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479974382
DOIs
StatePublished - Jan 30 2014
Externally publishedYes
Event2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014 - Millbrae, United States
Duration: Oct 6 2014Oct 9 2014

Other

Other2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014
CountryUnited States
CityMillbrae
Period10/6/1410/9/14

Keywords

  • cross-layer simulation
  • current source modeling
  • energy consumption
  • FinFET
  • multiple-threshold devices
  • near-threshold computing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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