Performance Comparisons between 7-nm FinFET and Conventional Bulk CMOS Standard Cell Libraries

Qing Xie, Xue Lin, Yanzhi Wang, Shuang Chen, Mohammad Javad Dousti, Massoud Pedram

Research output: Contribution to journalArticlepeer-review

61 Scopus citations


FinFET devices have been proposed as a promising substitute for conventional bulk CMOS-based devices at the nanoscale due to their extraordinary properties such as improved channel controllability, a high on/off current ratio, reduced short-channel effects, and relative immunity to gate line-edge roughness. This brief builds standard cell libraries for the advanced 7-nm FinFET technology, supporting multiple threshold voltages and supply voltages. The circuit synthesis results of various combinational and sequential circuits based on the presented 7-nm FinFET standard cell libraries forecast 10× and 1000× energy reductions on average in a superthreshold regime and 16× and 3000× energy reductions on average in a near-threshold regime as compared with the results of the 14-nm and 45-nm bulk CMOS technology nodes, respectively.

Original languageEnglish (US)
Article number7012086
Pages (from-to)761-765
Number of pages5
JournalIEEE Transactions on Circuits and Systems II: Express Briefs
Issue number8
StatePublished - Aug 1 2015


  • 7-nm technology
  • Energy-efficient computing
  • FinFET
  • nearthreshold computing
  • standard cell library

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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