Oxygen induced limitation on grain growth in RF sputtered Indium tin oxide thin films

Buddhi Sagar Lamsal, Yung Huh, Mukul Dubey, K. C. Manoj, Swaminathan Venkatesan, Qiquan Qiao, David Galipeau, Qi Hua Fan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Indium tin oxide (ITO) thin films were deposited onto glass substrates by RF magnetron sputtering to study variation of grain growth in pure argon and 99% argon plus 1% oxygen at different substrate temperatures. The average grain size increased with the increasing substrate temperature in pure argon. However, in oxygen presence environment the grain growth is limited at above 150°C. The films optoelectronic properties were evaluated. It was found that 200 nm ITO films prepared at 220 °C substrate temperature in pure argon possessed optimum sheet resistance of 10 Ω/sq. The transmittance of ITO films was enhanced with increasing the substrate temperature in pure argon but limited by the presence of excess oxyge

Original languageEnglish (US)
Title of host publication2013 IEEE International Conference on Electro/Information Technology, EIT 2013
DOIs
StatePublished - 2013
Externally publishedYes
Event2013 IEEE International Conference on Electro/Information Technology, EIT 2013 - Rapid City, SD, United States
Duration: May 9 2013May 11 2013

Publication series

NameIEEE International Conference on Electro Information Technology
ISSN (Print)2154-0357
ISSN (Electronic)2154-0373

Conference

Conference2013 IEEE International Conference on Electro/Information Technology, EIT 2013
CountryUnited States
CityRapid City, SD
Period5/9/135/11/13

ASJC Scopus subject areas

  • Computer Science Applications
  • Information Systems
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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