TY - GEN
T1 - Oxygen induced limitation on grain growth in RF sputtered Indium tin oxide thin films
AU - Lamsal, Buddhi Sagar
AU - Huh, Yung
AU - Dubey, Mukul
AU - Manoj, K. C.
AU - Venkatesan, Swaminathan
AU - Qiao, Qiquan
AU - Galipeau, David
AU - Fan, Qi Hua
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 2013
Y1 - 2013
N2 - Indium tin oxide (ITO) thin films were deposited onto glass substrates by RF magnetron sputtering to study variation of grain growth in pure argon and 99% argon plus 1% oxygen at different substrate temperatures. The average grain size increased with the increasing substrate temperature in pure argon. However, in oxygen presence environment the grain growth is limited at above 150°C. The films optoelectronic properties were evaluated. It was found that 200 nm ITO films prepared at 220 °C substrate temperature in pure argon possessed optimum sheet resistance of 10 Ω/sq. The transmittance of ITO films was enhanced with increasing the substrate temperature in pure argon but limited by the presence of excess oxyge
AB - Indium tin oxide (ITO) thin films were deposited onto glass substrates by RF magnetron sputtering to study variation of grain growth in pure argon and 99% argon plus 1% oxygen at different substrate temperatures. The average grain size increased with the increasing substrate temperature in pure argon. However, in oxygen presence environment the grain growth is limited at above 150°C. The films optoelectronic properties were evaluated. It was found that 200 nm ITO films prepared at 220 °C substrate temperature in pure argon possessed optimum sheet resistance of 10 Ω/sq. The transmittance of ITO films was enhanced with increasing the substrate temperature in pure argon but limited by the presence of excess oxyge
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U2 - 10.1109/EIT.2013.6632655
DO - 10.1109/EIT.2013.6632655
M3 - Conference contribution
AN - SCOPUS:84890062707
SN - 9781467352086
T3 - IEEE International Conference on Electro Information Technology
BT - 2013 IEEE International Conference on Electro/Information Technology, EIT 2013
T2 - 2013 IEEE International Conference on Electro/Information Technology, EIT 2013
Y2 - 9 May 2013 through 11 May 2013
ER -