Origins of very shallow photoconduction in Ge:Sb

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Three new effects in the very shallow photoconduction spectrum (h̵ω < 5 meV, T ∼ 0.4K) of Ge:Sb have been observed: the spectrum is found to depend strongly on electric-field, background excitation spectrum, and on the spectrometer chopping frequency. These effects are interpreted as evidence that the spectra are the consequence of two distinct trapping centers whose spectra overlap; they thus do not support the interpretation of this photoconduction as due entirely to a D band.

Original languageEnglish (US)
Pages (from-to)991-993
Number of pages3
JournalSolid State Communications
Issue number12
StatePublished - Jan 1 1980
Externally publishedYes

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry


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