Three new effects in the very shallow photoconduction spectrum (h̵ω < 5 meV, T ∼ 0.4K) of Ge:Sb have been observed: the spectrum is found to depend strongly on electric-field, background excitation spectrum, and on the spectrometer chopping frequency. These effects are interpreted as evidence that the spectra are the consequence of two distinct trapping centers whose spectra overlap; they thus do not support the interpretation of this photoconduction as due entirely to a D− band.
|Original language||English (US)|
|Number of pages||3|
|Journal||Solid State Communications|
|State||Published - Jan 1 1980|
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Chemistry