Origins of very shallow photoconduction in Ge:Sb

E. A. Schiff

doi:10.1016/0038-1098(80)91003-0

Origins of very shallow photoconduction in Ge:Sb

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Abstract

Three new effects in the very shallow photoconduction spectrum (h̵ω < 5 meV, T ∼ 0.4K) of Ge:Sb have been observed: the spectrum is found to depend strongly on electric-field, background excitation spectrum, and on the spectrometer chopping frequency. These effects are interpreted as evidence that the spectra are the consequence of two distinct trapping centers whose spectra overlap; they thus do not support the interpretation of this photoconduction as due entirely to a D⁻ band.

Original language	English (US)
Pages (from-to)	991-993
Number of pages	3
Journal	Solid State Communications
Volume	35
Issue number	12
DOIs	https://doi.org/10.1016/0038-1098(80)91003-0
State	Published - 1980
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(80)91003-0

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title = "Origins of very shallow photoconduction in Ge:Sb",

abstract = "Three new effects in the very shallow photoconduction spectrum (h̵ω < 5 meV, T ∼ 0.4K) of Ge:Sb have been observed: the spectrum is found to depend strongly on electric-field, background excitation spectrum, and on the spectrometer chopping frequency. These effects are interpreted as evidence that the spectra are the consequence of two distinct trapping centers whose spectra overlap; they thus do not support the interpretation of this photoconduction as due entirely to a D− band.",

author = "Schiff, {E. A.}",

year = "1980",

doi = "10.1016/0038-1098(80)91003-0",

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T1 - Origins of very shallow photoconduction in Ge:Sb

AU - Schiff, E. A.

PY - 1980

Y1 - 1980

N2 - Three new effects in the very shallow photoconduction spectrum (h̵ω < 5 meV, T ∼ 0.4K) of Ge:Sb have been observed: the spectrum is found to depend strongly on electric-field, background excitation spectrum, and on the spectrometer chopping frequency. These effects are interpreted as evidence that the spectra are the consequence of two distinct trapping centers whose spectra overlap; they thus do not support the interpretation of this photoconduction as due entirely to a D− band.

AB - Three new effects in the very shallow photoconduction spectrum (h̵ω < 5 meV, T ∼ 0.4K) of Ge:Sb have been observed: the spectrum is found to depend strongly on electric-field, background excitation spectrum, and on the spectrometer chopping frequency. These effects are interpreted as evidence that the spectra are the consequence of two distinct trapping centers whose spectra overlap; they thus do not support the interpretation of this photoconduction as due entirely to a D− band.

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JO - Solid State Communications

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ER -

Origins of very shallow photoconduction in Ge:Sb

Abstract

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