Optimization of photvoltaic devices from layered PTEBS and nanocrystalline TiO2

Qiquan Qiao, William C. Kerr, James Beck, Eric Corrigan, James T. McLeskey

Research output: Chapter in Book/Entry/PoemConference contribution

1 Scopus citations

Abstract

Sodium poly[2-(3-thienyl)-ethoxy-4-butylsulfonate] or PTEBS has been explored previously for use in the fabrication of photovoltaic cells. PTEBS is a water-soluble polythiophene and the use of this polymer would allow safe, environmentally friendly processing as well improved reproducibility. In this study, solar cells based on layered PTEBS and TiO2 nanocrystalline films were investigated. The variation of the TiO2 thickness on the spin coating speed and suspension concentration was studied. Multiple spin coatings were used to make layers thicker than 3.5 μm. The photovoltaic samples with the TiO2 thickness in the range of 180 nm ∼ 8.08 μm have been fabricated to investigate the dependence of the efficiency and open circuit voltage on the TiO2 thickness. The optimum TiO 2 thickness was found to be around 4 - 4.5 μm. The maximum efficiency of 0.15% was obtained at the TiO2 thickness of 4.17 urn in this experiment. The initial investigation of dependence of the device characteristics on the PTEBS thickness was also explored. copyright The Electrochemical Society.

Original languageEnglish (US)
Title of host publicationPhotovoltaics for the 21st Century III
PublisherElectrochemical Society Inc.
Pages1-6
Number of pages6
Edition33
ISBN (Electronic)9781566774888
DOIs
StatePublished - 2006
Externally publishedYes
EventPhotoboltaics for the 21st Century III - 208th Electrochemical Society Meeting - Los Angeles, CA, United States
Duration: Oct 16 2005Oct 21 2005

Publication series

NameECS Transactions
Number33
Volume1
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferencePhotoboltaics for the 21st Century III - 208th Electrochemical Society Meeting
Country/TerritoryUnited States
CityLos Angeles, CA
Period10/16/0510/21/05

ASJC Scopus subject areas

  • General Engineering

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