Abstract
FinFET devices are considered to be the device substitute for bulk CMOS in sub-20nm technology nodes due to the reduced short-channel effects, improved ON/OFF current ratio, and improved voltage scalability. This paper investigates the problem of optimal selection of deeply-scaled FinFET technology to achieve minimum energy consumption for different applications such as sensor applications, smartphones, embedded micro-processors, or server micro-processors, which differ in the required performance and duty ratio. For each application space, different FinFET technologies (with different Vth and gate length biases) are compared in term of minimum energy consumption for both logic circuits and cache memories. A device-circuit-architecture cross-layer framework has been developed to facilitate this technology selection. This optimal technology selection procedure demonstrates up to 11× energy saving compared to poorly selected technologies.
Original language | English (US) |
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Title of host publication | Proceedings - International Symposium on Quality Electronic Design, ISQED |
Publisher | IEEE Computer Society |
Pages | 234-238 |
Number of pages | 5 |
Volume | 2015-April |
ISBN (Print) | 9781479975815 |
DOIs | |
State | Published - Apr 13 2015 |
Externally published | Yes |
Event | 16th International Symposium on Quality Electronic Design, ISQED 2015 - Santa Clara, United States Duration: Mar 2 2015 → Mar 4 2015 |
Other
Other | 16th International Symposium on Quality Electronic Design, ISQED 2015 |
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Country | United States |
City | Santa Clara |
Period | 3/2/15 → 3/4/15 |
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality