Optimal choice of FinFET devices for energy minimization in deeply-scaled technologies

Mohammad Saeed Abrishami; Alireza Shafaei; Yanzhi Wang; Massoud Pedram

doi:10.1109/ISQED.2015.7085431

Optimal choice of FinFET devices for energy minimization in deeply-scaled technologies

Mohammad Saeed Abrishami, Alireza Shafaei, Yanzhi Wang, Massoud Pedram

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

FinFET devices are considered to be the device substitute for bulk CMOS in sub-20nm technology nodes due to the reduced short-channel effects, improved ON/OFF current ratio, and improved voltage scalability. This paper investigates the problem of optimal selection of deeply-scaled FinFET technology to achieve minimum energy consumption for different applications such as sensor applications, smartphones, embedded micro-processors, or server micro-processors, which differ in the required performance and duty ratio. For each application space, different FinFET technologies (with different V_th and gate length biases) are compared in term of minimum energy consumption for both logic circuits and cache memories. A device-circuit-architecture cross-layer framework has been developed to facilitate this technology selection. This optimal technology selection procedure demonstrates up to 11× energy saving compared to poorly selected technologies.

Original language	English (US)
Title of host publication	Proceedings of the 16th International Symposium on Quality Electronic Design, ISQED 2015
Publisher	IEEE Computer Society
Pages	234-238
Number of pages	5
ISBN (Electronic)	9781479975815
DOIs	https://doi.org/10.1109/ISQED.2015.7085431
State	Published - Apr 13 2015
Externally published	Yes
Event	16th International Symposium on Quality Electronic Design, ISQED 2015 - Santa Clara, United States Duration: Mar 2 2015 → Mar 4 2015

Publication series

Name	Proceedings - International Symposium on Quality Electronic Design, ISQED
Volume	2015-April
ISSN (Print)	1948-3287
ISSN (Electronic)	1948-3295

Other

Other	16th International Symposium on Quality Electronic Design, ISQED 2015
Country/Territory	United States
City	Santa Clara
Period	3/2/15 → 3/4/15

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Access to Document

10.1109/ISQED.2015.7085431

Cite this

Abrishami, M. S., Shafaei, A., Wang, Y., & Pedram, M. (2015). Optimal choice of FinFET devices for energy minimization in deeply-scaled technologies. In Proceedings of the 16th International Symposium on Quality Electronic Design, ISQED 2015 (pp. 234-238). [7085431] (Proceedings - International Symposium on Quality Electronic Design, ISQED; Vol. 2015-April). IEEE Computer Society. https://doi.org/10.1109/ISQED.2015.7085431

Optimal choice of FinFET devices for energy minimization in deeply-scaled technologies. / Abrishami, Mohammad Saeed; Shafaei, Alireza; Wang, Yanzhi et al.

Proceedings of the 16th International Symposium on Quality Electronic Design, ISQED 2015. IEEE Computer Society, 2015. p. 234-238 7085431 (Proceedings - International Symposium on Quality Electronic Design, ISQED; Vol. 2015-April).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abrishami, MS, Shafaei, A, Wang, Y & Pedram, M 2015, Optimal choice of FinFET devices for energy minimization in deeply-scaled technologies. in Proceedings of the 16th International Symposium on Quality Electronic Design, ISQED 2015., 7085431, Proceedings - International Symposium on Quality Electronic Design, ISQED, vol. 2015-April, IEEE Computer Society, pp. 234-238, 16th International Symposium on Quality Electronic Design, ISQED 2015, Santa Clara, United States, 3/2/15. https://doi.org/10.1109/ISQED.2015.7085431

Abrishami MS, Shafaei A, Wang Y, Pedram M. Optimal choice of FinFET devices for energy minimization in deeply-scaled technologies. In Proceedings of the 16th International Symposium on Quality Electronic Design, ISQED 2015. IEEE Computer Society. 2015. p. 234-238. 7085431. (Proceedings - International Symposium on Quality Electronic Design, ISQED). doi: 10.1109/ISQED.2015.7085431

@inproceedings{2215343a5247438d8f4606dc31b5de28,

title = "Optimal choice of FinFET devices for energy minimization in deeply-scaled technologies",

abstract = "FinFET devices are considered to be the device substitute for bulk CMOS in sub-20nm technology nodes due to the reduced short-channel effects, improved ON/OFF current ratio, and improved voltage scalability. This paper investigates the problem of optimal selection of deeply-scaled FinFET technology to achieve minimum energy consumption for different applications such as sensor applications, smartphones, embedded micro-processors, or server micro-processors, which differ in the required performance and duty ratio. For each application space, different FinFET technologies (with different Vth and gate length biases) are compared in term of minimum energy consumption for both logic circuits and cache memories. A device-circuit-architecture cross-layer framework has been developed to facilitate this technology selection. This optimal technology selection procedure demonstrates up to 11× energy saving compared to poorly selected technologies.",

author = "Abrishami, {Mohammad Saeed} and Alireza Shafaei and Yanzhi Wang and Massoud Pedram",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 16th International Symposium on Quality Electronic Design, ISQED 2015 ; Conference date: 02-03-2015 Through 04-03-2015",

year = "2015",

month = apr,

day = "13",

doi = "10.1109/ISQED.2015.7085431",

language = "English (US)",

series = "Proceedings - International Symposium on Quality Electronic Design, ISQED",

publisher = "IEEE Computer Society",

pages = "234--238",

booktitle = "Proceedings of the 16th International Symposium on Quality Electronic Design, ISQED 2015",

address = "United States",

}

TY - GEN

T1 - Optimal choice of FinFET devices for energy minimization in deeply-scaled technologies

AU - Abrishami, Mohammad Saeed

AU - Shafaei, Alireza

AU - Wang, Yanzhi

AU - Pedram, Massoud

PY - 2015/4/13

Y1 - 2015/4/13

N2 - FinFET devices are considered to be the device substitute for bulk CMOS in sub-20nm technology nodes due to the reduced short-channel effects, improved ON/OFF current ratio, and improved voltage scalability. This paper investigates the problem of optimal selection of deeply-scaled FinFET technology to achieve minimum energy consumption for different applications such as sensor applications, smartphones, embedded micro-processors, or server micro-processors, which differ in the required performance and duty ratio. For each application space, different FinFET technologies (with different Vth and gate length biases) are compared in term of minimum energy consumption for both logic circuits and cache memories. A device-circuit-architecture cross-layer framework has been developed to facilitate this technology selection. This optimal technology selection procedure demonstrates up to 11× energy saving compared to poorly selected technologies.

AB - FinFET devices are considered to be the device substitute for bulk CMOS in sub-20nm technology nodes due to the reduced short-channel effects, improved ON/OFF current ratio, and improved voltage scalability. This paper investigates the problem of optimal selection of deeply-scaled FinFET technology to achieve minimum energy consumption for different applications such as sensor applications, smartphones, embedded micro-processors, or server micro-processors, which differ in the required performance and duty ratio. For each application space, different FinFET technologies (with different Vth and gate length biases) are compared in term of minimum energy consumption for both logic circuits and cache memories. A device-circuit-architecture cross-layer framework has been developed to facilitate this technology selection. This optimal technology selection procedure demonstrates up to 11× energy saving compared to poorly selected technologies.

UR - http://www.scopus.com/inward/record.url?scp=84944329465&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84944329465&partnerID=8YFLogxK

U2 - 10.1109/ISQED.2015.7085431

DO - 10.1109/ISQED.2015.7085431

M3 - Conference contribution

AN - SCOPUS:84944329465

T3 - Proceedings - International Symposium on Quality Electronic Design, ISQED

SP - 234

EP - 238

BT - Proceedings of the 16th International Symposium on Quality Electronic Design, ISQED 2015

PB - IEEE Computer Society

T2 - 16th International Symposium on Quality Electronic Design, ISQED 2015

Y2 - 2 March 2015 through 4 March 2015

ER -

Optimal choice of FinFET devices for energy minimization in deeply-scaled technologies

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