Optically detected photocarrier transport in amorphous silicon: a review

R. I. Devlen, E. A. Schiff

Research output: Contribution to journalReview articlepeer-review

11 Scopus citations

Abstract

Measurements of photocarrier transport in hydrogenated amorphous silicon, a-Si:H, based on optical techniques are reviewed. Picosecond domain measurements on multilayer and p-i-n diode structures are described as representative of the use of structural inhomogeneities to establish the distance scale of the transport. Measurements using diffraction by photoinduced gratings are described as representative of the use of photoinduced inhomogeneities. The relative effects of thermal and photocarrier gratings upon the diffraction measurements are discussed. It is suggested that photocarrier grating measurements can be re-interpreted to yield the band mobility for holes in a-Si:H, and the value of 0.2 cm2/V s is obtained near room temperature.

Original languageEnglish (US)
Pages (from-to)106-118
Number of pages13
JournalJournal of Non-Crystalline Solids
Volume141
Issue numberC
DOIs
StatePublished - 1992

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Optically detected photocarrier transport in amorphous silicon: a review'. Together they form a unique fingerprint.

Cite this