Optical-bias effects in electron-drift measurements and defect relaxation in a-Si: H

Daxing Han, Douglas C. Melcher, Eric Allan Schiff, M. Silver

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

We report measurements of the effects of optical bias upon photocharge transients in a-Si:H. Transients were recorded from 100 ns to 10 s following a laser pulse. Without optical bias these transients exhibit a form consistent with trapping of electrons by a deep level; this result is consistent with extensive prior research. However, even low levels of optical bias (generation rate 1017 cm-3 s-1) suppress deep trapping, leading to an enhancement of electron drift by as much as one decade. We propose that charge state transitions associated with optical bias leave defects in metastable configurations. The corresponding transition energies lie closer to the conduction band than for the defects relaxed, equilibrium configuration.

Original languageEnglish (US)
Pages (from-to)8658-8666
Number of pages9
JournalPhysical Review B
Volume48
Issue number12
DOIs
StatePublished - 1993

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Defects
Electrons
defects
electrons
trapping
Electron transitions
Conduction bands
Laser pulses
configurations
conduction bands
augmentation
pulses
lasers
energy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Optical-bias effects in electron-drift measurements and defect relaxation in a-Si : H. / Han, Daxing; Melcher, Douglas C.; Schiff, Eric Allan; Silver, M.

In: Physical Review B, Vol. 48, No. 12, 1993, p. 8658-8666.

Research output: Contribution to journalArticle

Han, Daxing ; Melcher, Douglas C. ; Schiff, Eric Allan ; Silver, M. / Optical-bias effects in electron-drift measurements and defect relaxation in a-Si : H. In: Physical Review B. 1993 ; Vol. 48, No. 12. pp. 8658-8666.
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