TY - JOUR
T1 - Open-circuit voltage physics in amorphous silicon solar cells
AU - Jiang, L.
AU - Lyou, J. H.
AU - Rane, S.
AU - Schiff, E. A.
AU - Wang, Q.
AU - Yuan, Q.
N1 - Funding Information:
This work has been supported through the Thin Film Photovoltaics Partnership of the National Renewable Energy Laboratory. We thank Jeffrey Yang of United Solar Systems Corp. for the samples used in the electroabsorption measurements and for discussions. We thank Jerry Goodisman, Richard Crandall, and Chris Wronski for discussions.
PY - 2000
Y1 - 2000
N2 - We have performed computer calculations to explore effects of the p/i interface on the open-circuit voltage in a-Si:H based pin solar cells. The principal conclusions are that interface limitation can occur for values of VOC significantly below the built-in potential VBI of a cell, and that the effects can be understood in terms of thermionic emission of electrons from the intrinsic layer into the p-layer. We compare measurements of VOC and electroabsorption estimates of VBI with the model calculations. We conclude that p/i interface limitation is important for current a-Si:H based cells, and that the conduction band offset between the p and i layers is as important as the built-in potential for future improvements to VOC.
AB - We have performed computer calculations to explore effects of the p/i interface on the open-circuit voltage in a-Si:H based pin solar cells. The principal conclusions are that interface limitation can occur for values of VOC significantly below the built-in potential VBI of a cell, and that the effects can be understood in terms of thermionic emission of electrons from the intrinsic layer into the p-layer. We compare measurements of VOC and electroabsorption estimates of VBI with the model calculations. We conclude that p/i interface limitation is important for current a-Si:H based cells, and that the conduction band offset between the p and i layers is as important as the built-in potential for future improvements to VOC.
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U2 - 10.1557/proc-609-a18.3
DO - 10.1557/proc-609-a18.3
M3 - Conference Article
AN - SCOPUS:0034431492
SN - 0272-9172
VL - 609
SP - A1831-A18311
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Amorphous and Heterogeneus Silicon Thin Films-2000
Y2 - 24 April 2000 through 28 April 2000
ER -