Open-circuit voltage physics in amorphous silicon solar cells

L. Jiang, J. H. Lyou, S. Rane, E. A. Schiff, Q. Wang, Q. Yuan

Research output: Contribution to journalConference article

27 Scopus citations

Abstract

We have performed computer calculations to explore effects of the p/i interface on the open-circuit voltage in a-Si:H based pin solar cells. The principal conclusions are that interface limitation can occur for values of VOC significantly below the built-in potential VBI of a cell, and that the effects can be understood in terms of thermionic emission of electrons from the intrinsic layer into the p-layer. We compare measurements of VOC and electroabsorption estimates of VBI with the model calculations. We conclude that p/i interface limitation is important for current a-Si:H based cells, and that the conduction band offset between the p and i layers is as important as the built-in potential for future improvements to VOC.

Original languageEnglish (US)
Pages (from-to)A1831-A18311
JournalMaterials Research Society Symposium - Proceedings
Volume609
DOIs
StatePublished - Jan 1 2000
EventAmorphous and Heterogeneus Silicon Thin Films-2000 - San Francisco, CA, United States
Duration: Apr 24 2000Apr 28 2000

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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